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Technical content
Features
High Avalanche (UIS) Capability Enhanced Surge Current Capability 175 °C Maximum Operating Temperature Temperature Independent Switching Behavior Positive Temperature Coefficient Of VF Extremely Fast Switching Speeds Superior Figure of Merit QC/IF Advantages Low Standby Power Losses Improved Circuit Efficiency (Lower Overall Cost) Low Switching Losses Ease of Paralleling Devices without Thermal Runaway Smaller Heat Sink Requirements Low Reverse Recovery Current Low Device Capacitance Low Reverse Leakage Current at Operating Temperature Absolute Maximum Ratings Parameter Repetitive Peak Reverse Voltage Continuous Forward Current Non-Repetitive Peak Forward Surge Current, Half Sine Wave Repetitive Peak Forward Surge Current, Half Sine Wave Non-Repetitive Peak Forward Surge Current I2t Value Non-Repetitive Avalanche Energy Diode Ruggedness Power Dissipation Operating and Storage Temperature
Electrical Characteristics
Thermal / Mechanical Characteristics Thermal Resistance, Junction - Case http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Package TO-220-2L
Applications
Overall Cost) ithout Thermal Runaway t Operating Temperature Power Factor Correction (PFC) Switched-Mode Power Supply (SMPS) Solar Inverters Wind Turbine Inverters Motor Drives Induction Heating Uninterruptible Power Supply (UPS) High Voltage Multipliers Symbol Conditions Values VRRM 1200 IF TC = 25 °C, D = 1 11 TC = 135 °C, D = 1 5 TC = 168 °C, D = 1 2 IF,SM TC = 25 °C, tP = 10 ms 21 TC = 150 °C, tP = 10 ms 17 IF,RM TC = 25 °C, tP = 10 ms 14 TC = 150 °C, tP = 10 ms 8 IF,max TC = 25 °C, tP = 10 µs 220 ∫i2 dt TC = 25 °C, tP = 10 ms 1.8 EAS L = 30 mH, IAV = 2 A, VDD = 60 V 30 dV/dt VR = 0 ~ 960 V 100 Ptot TC = 25 °C 97 Tj , Tstg - 55 to 175 Symbol Conditions Values min. typ. VF IF = 2 A, Tj = 25 °C 1.5 IF = 2 A, Tj = 175 °C 2.3 IR VR = 1200 V, Tj = 25 °C 0.2 VR = 1200 V, Tj = 175 °C 1 QC IF ≤ IF,MAX dIF/dt = 200 A/μs Tj = 175 °C VR = 400 V 7 VR = 800 V 11 ts VR = 400 V < 10 VR = 800 V C VR = 1 V, f = 1 MHz, Tj = 25 °C 118 VR = 800 V, f = 1 MHz, Tj = 25 °C 8 RthJC 1.53 VRRM IF (Tc = 13 QC case http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Page 1 of 6 Mode Power Supply (SMPS) Values Unit 1200 V A A A A A2s mJ V/µs W 55 to 175 °C Values Unit max. 1.8 V 2.7 2 µA 19 nC ns pF °C/W = 1200 V 35°C) = 5 A = 11 nC
1200 V SiC MPS™ Diode
Feb 2018 Rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ IF = f(VF,Tj); tP = 300 µs Figure 1: Typical Forward Characteristics IR = f(VR,Tj) Figure 3: Typical Reverse Characteristics http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ s IF = f(VF,Tj); tP = 300 Figure 1: Typical Forward Characteristics Figure 2: Typical High Current Forward Characteristics Ptot = f(Tj) Figure 3: Typical Reverse Characteristics Figure 4: Power Derating Curve http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Page 2 of 6 = 300 µs Figure 2: Typical High Current Forward Characteristics Power Derating Curve
Feb 2018 Rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ IF = f(TC); D = tP/T, tP= 10 µs Figure 5: Current Derating Curves Qc = f(VR); Tj = 25 °C; f = 1MHz Figure 7: Typical Capacitive Charge vs. Reverse Voltage Characteristics http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ = 10 µs C = f(VR); Tj = 25 °C; f = 1MHz Figure 5: Current Derating Curves Figure 6: Typical Junction Capacitance vs Reverse Voltage Characteristics ; f = 1MHz E C = f(VR); Tj = 25 °C; f = 1MHz Typical Capacitive Charge vs. Characteristics Figure 8: Typical Capacitive Energy vs. Reverse Voltage Characteristics http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Page 3 of 6 ; f = 1MHz Figure 6: Typical Junction Capacitance vs Reverse Voltage Characteristics ; f = 1MHz Figure 8: Typical Capacitive Energy vs. Characteristics
Feb 2018 Rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Figure IF = f(VF, Tj) Figure 10: Forward Curve Model http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Zth,jc = f(tP,D); D = tP/T Figure 9: Transient Thermal Impedance IF = (VF – VBI)/R Built-In Voltage (V VBI(Tj) = m*Tj + b, Differential Resistance (R RDIFF(Tj) = a*Tj2 + b*T : Forward Curve Model http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Page 4 of 6 )/RDIFF Voltage (VBI): + b, 03, b = 0.906 Differential Resistance (RDIFF): + b*Tj + c (Ω);
Feb 2018 Rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Package Dimensions: TO-220-2L Recommended Solder Pad Layout NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ PACKAGE OUTLINE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Page 5 of 6
Copyright © 2018 GeneSiC Semiconductor Inc. All Rights Reserved The information in this document is subject to change without notice Feb 2018 Rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your GeneSiC representative. REACH Compliance REACH substances of high concern (SVHCs) information is available for this product. Since the European Chemi (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, GeneSiC representative to insure you get the most up information (REACH Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury including but not limited to equipment used in the operation of nuclear facilities, life defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Related Links Soldering Document: http://www.genesicsemi.com/quality/quality Tin-whisker Report: http://www.genesicsemi.com/quality/compliance/ Reliability Report: http://www.genesicsemi.com/quality/reliability/ Semiconductor Inc. All Rights Reserved The information in this document is subject to change without notice 43670 Trade Center Place Suite 155 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive ented January 2, 2013. RoHS Declarations for this product can be obtained from your substances of high concern (SVHCs) information is available for this product. Since the European Chemi has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, representative to insure you get the most up-to-date REACH SVHC Declaration. REAC 7) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or intellectual property rights is granted by this document. http://www.genesicsemi.com/quality/quality-manual/ http://www.genesicsemi.com/quality/compliance/ http://www.genesicsemi.com/quality/reliability/ Published by GeneSiC Semiconductor, Inc.
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restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive ented January 2, 2013. RoHS Declarations for this product can be obtained from your substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a SVHC Declaration. REACH banned substance This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or
Feb 2018 Rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website (http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/GC02MPS12 into LTSPICE (version 4) software for simulation of the G * GeneSiC Semiconductor SiC MPS * Revision: 1.1 * Date: February-2018 L_anode A AD 6 D1 AD Case GC02MPS12 L_cathode K Case 6 .ends D1 ANODE KATHODE GC02MPS12_SCHOTTKY .MODEL GC02MPS12_SCHOTTKY D + IS 2.05E- 15 + N 1 + EG 1.2 + TRS1 0.005434 + CJO 1.65E-10 + M 0.438 + TT 1.00E-10 + IBV 0.2E-06 + IAVE 2 + MFG GeneSiC_Semi .ENDS * End of GC02MPS12-220 SPICE Model * EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED TO ANY IMPLIED * WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE." http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ This is a secure document. Please copy this code from the SPICE model PDF file on our website http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/GC02MPS12 tware for simulation of the GC02MPS12-220. GeneSiC Semiconductor SiC MPSTM Rectifier L_anode A AD 6.5n D1 AD Case GC02MPS12 L_cathode K Case 6.5n 12_SCHOTTKY 12_SCHOTTKY D 15 RS 0.3105 IKF 500 XTI 2 TRS2 2.717E-05 VJ 0.879 FC 0.5 BV 1600 VPK 1200 TYPE SiC_MPSTM SPICE Model * EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED TO ANY IMPLIED * WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE." http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ Page 1 of 1 This is a secure document. Please copy this code from the SPICE model PDF file on our website http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/GC02MPS12-220_SPICE.pdf) * EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED TO ANY IMPLIED * WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE."