GC01L60 ETL | Alldatasheet
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*Simple Drive Requirement *Low Gate Charge *Fast Switching Characteristics Package Dimensions A 4.45 4.7 D 4.44 4.7 S1 1.02 - E 3.30 3.81 b 0.36 0.51 L 12.70 - b1 0.36 0.76 e1 1.150 1.390 C 0.36 0.51 e 2.42 2.66 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS f30 V Continuous Drain Current, VGS@10V ID @TA=25: 160 mA Continuous Drain Current, VGS@10V ID @TA=100: 100 mA Pulsed Drain Current1 IDM 300 mA Total Power Dissipation PD @TC=25: 0.83 W Single Pulse Avalanche Energy2 EAS 0.5 mJ Avalanche Current IAR 1 A Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Thermal Data Parameter Symbol Value Unit Thermal Resistance Junction-ambient Max. Rthj-a 150 /W BVDSS 600V RDS(ON) 12 ID 160mA Pb Free Plating Product L e1 b e S E A T IN G P L A N E A D C S 1 E TO-92
GC01L60 Page: 2/4 ISSUED DATE :2005/09/14 REVISED DATE : Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 600 - - V VGS=0, ID=1mA Breakdown Voltage Temperature Coefficient æBVDSS /æTj - 0.8 - V/: Reference to 25:, ID=1mA Gate Threshold Voltage VGS(th) 2.0 - 4.0 V VDS=VGS, ID=250uA Forward Transconductance gfs - 0.8 - S VDS=10V, ID=0.5A Gate-Source Leakage Current IGSS - - D100 nA VGS= D30V Drain-Source Leakage Current(Tj=25:) - - 10 uA VDS=600V, VGS=0 Drain-Source Leakage Current(Tj=150:) IDSS - - 100 uA VDS=480V, VGS=0 Static Drain-Source On-Resistance3 RDS(ON) - - 12 Ł VGS=10V, ID=0.5A Total Gate Charge3 Qg - 5 8 Gate-Source Charge Qgs - 1.5 - Gate-Drain (“Miller”) Change Qgd - 0.7 - nC ID=0.5A VDS=480V VGS=10V Turn-on Delay Time3 Td(on) - 8 - Rise Time Tr - 5 - Turn-off Delay Time Td(off) - 13 - Fall Time Tf - 9 - ns VDD=300V ID=1A VGS=10V RG=10Ł RD=300Ł Input Capacitance Ciss - 260 420 Output Capacitance Coss - 20 - Reverse Transfer Capacitance Crss - 3 - pF VGS=0V VDS=25V f=1.0MHz Gate Resistance Rg - 3 - Ł f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage3 VSD - - 1.2 V IS=160mA, VGS=0V Reverse Recovery Time3 Trr - 345 - ns Reverse Recovery Charge Qrr - 1 - nC IS=1A, VGS=0V dI/dt=100A/s Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25:, VDD=50V, L=1mH, RG=25Ł, IAS=1A. 3. Pulse width 300us, duty cycle 2%.
GC01L60 Page: 3/4 ISSUED DATE :2005/09/14 REVISED DATE : Characteristics Curve Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 3. Normalized BVDSS v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
GC01L60 Page: 4/4 ISSUED DATE :2005/09/14 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Fig 9. Maximum Drain Current v.s. Case Temperature Fig 10. Type Power Dissipation