GBC807 ETL | Alldatasheet
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Technical content
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Description
The GBC807 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. Package Dimensions A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0C 10C Absolute Maximum Ratings at Ta = 25:::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage VCBO -50 V Collector to Emitter Voltage VCEO -45 V Emitter to Base Voltage VEBO -5 V Collector Current IC -800 mA Total Power Dissipation PD 225 mW Characteristics at Ta = 25 :::: Symbol Min. Typ. Max. Unit Test Conditions BVEBO -5 - - V IE=-100uA BVCEO -45 - - V IC=-10mA BVCES -50 - - V IC=-100uA ICES - - -100 nA VCE=-25V IEBO - - -100 nA VEB=-4V *VCE(sat) - - -700 mV IC=-500mA, IB=-50mA VBE(on) - - -1.2 V VCE=-1V, IC=-300mA hFE 100 - 630 VCE=-1V, IC=-100mA fT - 100 - MHz VCE=-5V, IC=-10mA, f=100MHz Cob - - 12 pF VCB=-10V, f=1MHz, IE=0A
hFE 100-250 160-400 250-630 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165