GBAS70-A-C-S ETL | Alldatasheet

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Technical content

GBAS70/A/C/S Page: 1/2 ISSUED DATE :2003/04/10 REVISED DATE :2005/12/28B TPU.34)QBDLBHF* GG BB AASS 77 00 // AA// CC // SS S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 7 0 V, C U R R E N T 7 0 m A

Description

These Schottky barrier diodes are designed for high speed switching applications, circuit protection and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Package Dimensions Millimeter A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0° 10° Absolute Maximum Ratings at TA = 25:::: Parameter Symbol Ratings Unit Operating Junction Temperature Tj +125 : Storage Temperature Tstg -65 ~ +125 : Maximum Repetitive Peak Reverse Voltage VRRM 70 V Maximum Average Forward Rectified Current Io 70 mA Non- Repetitive Peak Forward Surge Current @ tp 1.0s IFSM 100 mA Thermal Resistance Junction to Ambient Air RJA 445 :/W Total Power Dissipation PD 225 mW

Electrical Characteristics

(at TA = 25: unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Test Conditions Reverse Breakdown Voltage V(BR)R 70 - - V IR=10A - - 410 IF1=1mA - - 750 IF1=10mA Forward Voltage VF - - 1000 mV IF2=15mA - 100 nA VR1=50V Reverse Leakage Current IR - 10 uA VR2=70V Total Capacitance CT - - 2.0 pF VR=0V, f=1MHz Reverse Recover Time Trr - - 5.0 ns IF=IR=10mA, RL=100, Irr=1mA

GBAS70/A/C/S Page: 2/2 ISSUED DATE :2003/04/10 REVISED DATE :2005/12/28B Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165