GB840 ETL | Alldatasheet

Document overview

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Technical content

Features

*Low forward voltage drop *High frequency operation Package Dimensions A 6.40 6.80 G 0.50 0.70 B 5.20 5.50 H 2.20 2.40 C 6.80 7.20 J 0.45 0.55 D 2.20 2.80 K 0 0.15 E 2.30 REF. L 0.90 1.50 F 0.70 0.90 M 5.40 5.80 S 0.60 0.90 R 0.80 1.20 Absolute Maximum Ratings at Ta=25:::: Parameters Symbol Ratings Unit Condition DC Reverse Voltage VR(RMS) 40 V Working Peak Reverse Voltage VRWM 40 V Average Forward Current IF 8 A 50% duty cycle @TC=119:, rectangular waveform Surge Forward Current IFSM 380 A 10ms Sine or 6ms Rect. pulse Junction Temperature Tj -55 ~ +150 : Storage Temperature Tstg -55 ~ +175 : Thermal Resistance, Junction to case RJC 5 :/W

Electrical Characteristics

Ratings Parameters Symbol min typ max Unit Condition Reverse Voltage VR 40 - - V IR=3mA, Tj=25: Forward Voltage* VF - - 0.53 V IF=8A, Tj=25: Reverse Current* IR - - 2.0 mA VR=40V, Tj=25: Junction Capacitance CT - - 900 pF VR=5V,Tj=25: (test signal range 100KHz~1MHz) Series Inductance LS - 10.0 - nH Measure lead to lead 5mm form body Note *: Pulse Width <300s, Duty Cycle <2%. TO-252

GB840 Page: 2/2 ISSUED DATE :2005/05/26 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 T Fig. 1 - Max. Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage T