DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Aug 2013 http://www.genesicsemi.com/index.php/sic-products/schottky Pg1 of 4 PIN 1 PIN 2 CASE Silicon Carbide Power Schottky Diode Features Package  1200 V Schottky rectifier  175 °C maximum operating temperature  Temperature independent switching behavior  Superior surge current capability  Positive temperature coefficient of V F  Extremely fast switching speeds  Superior figure of merit Q C/IF  RoHS Compliant TO – 220AC Advantages Applications  Improved circuit efficienc y (Lower overall cost)  Low switching losses  Ease of paralleling devices without thermal runaway  Smaller heat sink requirements  Low reverse recovery current  Low device capacitance  Low reverse leakage current at operating temperature  Power Factor Correction (PFC)  Switched-Mode Power Supply (SMPS)  Solar Inverters  Wind Turbine Inverters  Motor Drives  Induction Heating  Uninterruptible Power Supply (UPS)  High Voltage Multipliers Maximum Ratings at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions Values Unit Repetitive peak reverse voltage V RRM 1200 V Continuous forward current I F TC ≤ 160 °C 1 A RMS forward current I F(RMS) TC ≤ 160 °C 2 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tP = 10 ms 10 A TC = 160 °C, tP = 10 ms 8 Non-repetitive peak forward current I F,max TC = 25 °C, tP = 10 µs 65 A I t value ∫i 2 dt TC = 25 °C, tP = 10 ms 0.5 A s TC = 160 °C, tP = 10 ms 0.3 Power dissipation P tot TC = 25 °C 42 W Operating and storage temperature T j , Tstg -55 to 175 °C Electrical Characteristics at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Diode forward voltage V F IF = 1 A, Tj = 25 °C 1.6 1.8 V IF = 1 A, Tj = 175 °C 2.4 3.7 Reverse current I R VR = 1200 V, Tj = 25 °C 1 10 µA VR = 1200 V, Tj = 175 °C 10 100 Total capacitive charge Q C IF ≤ IF,MAX dIF/dt = 200 A/μs Tj = 175 °C VR = 400 V 7 nC VR = 960 V 13 Switching time t s VR = 400 V < 17 ns VR = 960 V Total capacitance C VR = 1 V, f = 1 MHz, Tj = 25 °C 69 pF VR = 400 V, f = 1 MHz, Tj = 25 °C 10 VR = 1000 V, f = 1 MHz, Tj = 25 °C 8 Thermal Characteristics Thermal resistance, junction - case R thJC 3.6 °C/W Mechanical Properties Mounting torque M 0.6 Nm case VRRM = 1200 V IF (Tc = 25°C) = 2.5 A QC = 7 nC

Aug 2013 http://www.genesicsemi.com/index.php/sic-products/schottky Pg3 of 4 Figure 7: Current vs Pulse Duration Curves at TC = 160 °C Figure 8: Transient Thermal Impedance Package Dimensions: TO-220AC PACKAGE OUTLINE NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS

Aug 2013 http://www.genesicsemi.com/index.php/sic-products/schottky Pg4 of 4

Revision History

Date Revision Comments Supersedes 2014/08/26 3 Updated Electric al Characteristics 2013/02/05 2 Second generation update 2012/05/22 1 Second generation release 2010/12/13 0 Initial release Published by GeneSiC Semiconductor, Inc.

43670 Trade Center Place Suite 155

Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage.

Nov 2013 http://www.genesicsemi.com/index.php/sic-products/schottky Pg1 of 1 SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the GB01SLT12-220 device. * MODEL OF GeneSiC Semiconductor Inc. * $Revision: 1.0 $ * $Date: 04-SEP-2013 $ * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * http://www.genesicsemi.com/index.php/sic-products/schottky * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * Start of GB01SLT12-220 SPICE Model .SUBCKT GB01SLT12 ANODE KATHODE R1 ANODE INT R=((TEMP-24)*0.0069); Temperature Dependant Resistor D1 INT KATHODE GB01SLT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB01SLT12_PIN; Call the PiN Diode Model .MODEL GB01SLT12_25C D + IS 7.27E-19 RS 0.592251 + N 1 IKF 407.773 + EG 1.2 XTI 3 + CJO 7.90E-11 VJ 0.367 + M 1.63 FC 0.5 + TT 1.00E-10 BV 1200 + IBV 1.00E-03 VPK 1200 + IAVE 1 TYPE SiC_Schottky + MFG GeneSiC_Semiconductor .MODEL GB01SLT12_PIN D + IS 1.08E-17 RS 1.8 + N 2.2313 IKF 999 + EG 3.23 XTI -65 + FC 0.5 TT 0 + BV 1200 IBV 1.00E-03 + VPK 1200 IAVE 1 + TYPE SiC_PiN .ENDS * End of GB01SLT12-220 SPICE Model