DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

January 2011 Preliminary Datasheet http://www.genesicsemi.com Page 1 of 5 GA35XCP12-247 IGBT/SiC Diode Co-pack = 1200 V = 35 A = 3.0 V Features Package Advantages Applications Parameter Symbol Conditions Values Unit IGBT Collector-Emitter Voltage 1200 V DC-Collector Current 35 A Gate Emitter Peak Voltage ± 20 V Operating Temperature -40 to +150 ºC Storage Temperature -40 to +150 ºC Free-wheeling diode DC-Forward Current 35 A Non Repetitive Peak Forward Current tbd A Surge Non Repetitive Forward Current tbd A Thermal Characteristics Th. Resistance Junction to Case IGBT 0.34 K/W Th. Resistance Junction to Case SiC diode 0.31 K/W Mechanical Properties Values min. typ. max. Mounting Torque 1.5 2 Nm VCES ICM VCE(SAT)

  • Optimal Punch Through (OPT) technology • RoHS Compliant
  • SiC freewheeling diode
  • Positive temperature coefficient for easy paralleling
  • Extremely fast switching speeds
  • Temperature independent switching behavior of SiC rectifier
  • Best RBSOA/SCSOA capability in the industry
  • High junction temperature
  • Industry standard packaging TO – 247AB
  • Industry's highest switching speeds • Solar Inverters
  • High temperature operation • Aerospace Actuators
  • Improved circuit efficiency • Server Power Supplies
  • Low switching losses • Resonant Inverters > 100 kHz
  • Inductive Heating
  • Electronic Welders Maximum Ratings, at Tj = 150 °C, unless otherwise specified VCES ICM Tc ≤ 105 ºC VGES Tvj Tstg IF Tc ≤ 105 ºC IFM Tc = 25 ºC, tP = 10 μs IF,SM tP = 10 ms, half sine, Tc = 25 ºC RthJC RthJC Md http://www.genesicsemi.com/index.php/sic-products/copack

January 2011 Preliminary Datasheet http://www.genesicsemi.com Page 2 of 5 GA35XCP12-247

Electrical Characteristics

Parameter Symbol Conditions Values Unitmin. typ. max. IGBT Gate Threshold Voltage 5.5 6 6.5 V Collector-Emitter Leakage Current 0.02 0.2 mA 0.3 mA Gate-Leakage Current 500 nA Collector-Emitter Threshold Voltage 1.1 V Collector-Emitter Slope Resistance 50 m Ω 87.5 m Ω Collector-Emitter Saturation Voltage 3.0(3.9) V Input Capacitance tbd nF Output Capacitance tbd nF Reverse Transfer Capacitance tbd nF Gate Charge 50 nC Reverse Bias Safe Operating Area RBSOA 45 A Short Circuit Current 60 A Short Circuit Duration 10 μs Rise Time 85 ns Fall Time 205 ns Turn On Delay Time 40 ns Turn Off Delay Time 232 ns Turn-On Energy Loss Per Pulse 2.66 mJ Turn-Off Energy Loss Per Pulse 4.35 mJ Free-wheeling diode Forward Voltage 2.6(3.5) V Threshold Voltage at Diode 0.8 V Peak Reverse Recovery Current 3.01 A Reverse Recovery Time 36 ns

190 A/ μs

VGE(th) VGE = VCE, IC = 0.6 mA, Tj = 25 ºC ICES,25 VGE = 0 V, VCE = VCES, Tj = 25 ºC ICES,150 VGE = 0 V, VCE = VCES, Tj = 150 ºC IGES VCE = 0 V, VGE = 20 V, Tj = 25 ºC VCE(TO) Tj= 25ºC RCE,25 VGE = 15 V, Tj = 25 ºC RCE,150 VGE = 15 V, Tj = 150 ºC VCE(SAT) IC = 35 A, VGE = 15 V, Tj = 25 ºC(150 ºC) Cies VGE = 0 V, VCE = 25 V, f = 1 MHzCoes Cres QG VCC= 800 V, IC = 35 A, VGE= 15V Tj=125 ºC, Rg=56Ω, VCC=1200 V, VGE=15 V Isc Tj = 125 ºC, Rg = 56Ω, VCC = 900 V, VGE = ±15 Vtsc tr VCC= 800 V, IC = 35 A, Rgon = Rgoff = 22 Ω, VGE(0n)= 15 V, VGE(0ff)= -8 V, Tj= 125 ºC tf td(on) td(off) Eon Eoff VF IF = 35 A, VGE = 0 V, Tj = 25 ºC (150 ºC ) VD(TO) Tj = 25 ºC Irrm IF = 35 A, VGE = 0 V, VR = 650 V -dIF/dt = 300 A/μs, Tj = 125 ºC trr Diode peak rate of fall of reverse recovery current during tb dIrr/dt Figure 1: Typical Output Characteristics at 25 oC Figure 2: Typical Output Characteristics at 150 oC

January 2011 Preliminary Datasheet http://www.genesicsemi.com Page 4 of 5 GA35XCP12-247 Figure 9: Typical Reverse Recovery Currents and Times Package Dimensions: TO-247AB PACKAGE OUTLINE NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS

January 2011 Preliminary Datasheet http://www.genesicsemi.com Page 5 of 5 GA35XCP12-247

Revision History

Date Revision Comments Supersedes 2011/01/06 1 First generation release Published by GeneSiC Semiconductor, Inc.

43670 Trade Center Place Suite 155

Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any wa rranty and liability aris ing out of use or application of an y product. No license, express or i mplied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not de signed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in deat h, personal injury and/or property damage.