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Technical content
November 2010 Preliminary Datasheet http://www.genesicsemi.com Page 1 of 3 GA040TH65 Silicon Carbide Thyristor = 6500 V = 40 A Features Package
Applications
Parameter Symbol Conditions Values Unit Repetitive peak forward voltage 6500 V Repetitive peak reverse voltage 50 V Maximum average on-state current 40 A RMS on-state current 69 A Non-repetitive peak on-state current tbd A Power dissipation 595 W Operating and storage temperature -55 to 150 °C
Electrical Characteristics
Parameter Symbol Conditions Values Unitmin. typ. max. Maximum peak on state voltage -4.30 V-3.90 Anode-cathode threshold voltage -3.1(-2.8) V Anode-cathode slope resistance 20(21) mΩ Leakage current 15 µA30 Gate trigger current -30 mA Holding current 780 mA Rise time 200 ns Delay time 40 ns Reverse recovery charge 1.8 Recovered charge, 50% chord 0.6 Reverse recovery current 11 A Circuit commutated turn-off time 4.7 Thermal Characteristics Thermal resistance, junction - case 0.21 °C/W Mechanical Properties Mounting torque for base Heat sink surface must be optically flat 1.5 Nm Mounting torque for top 1.3 Nm Weight 30 g VFBM IT(AVM) Qrr 1.8 µC
- 6500 V Asymmetric SiC NPNP Thyristor
- 150 °C operating temperature
- Robust compact fully soldered package
- SOT-227 (ISOTOP) base plate form factor
- Fast turn on characteristics
- Lowest in class Qrr/IT(AVM)
- Grid Tied Solar Inverters
- Wind Power Inverters
- HVDC Power Conversion
- Utility Scale Power Conversion
- Trigger Circuits/Ignition Circuits VFBM Tj = 25 °C VRBM Tj = 25 °C IT(AVM) TC ≤ 120 °C IT(RMS) TC ≤ 120 °C IT,max TC= 25 °C, tp = 2 us, D = 0.1 Ptot TC= 25 °C Tj, Tstg VKA(ON) IK = -40 A, Tj = 25 °C IK = -40 A, Tj = 150 °C VKA(TO) Tj = 25 °C (150 °C) RAK Tj = 25 °C (150 °C), IK = -40 A IL VKA = -6500 V, VGA = 0 V, Tj = 25 °C VKA = -6500 V, VGA = 0 V, Tj = 150 °C IGT Tj = 25 °C, tP = 10 µs IH Tj = 25 °C tR IG = -3 A, VKA = -2500 V tD IK = -40 A, Tj = 25 °C Qrr µC Qra dI/dt = 270 A/us, IK = -40 A, VKA = 20 V µC Irm dV/dt(re-app) = -500 V/us, Tj = 25 °C tq µs RthJC Mb Mt Wt 1. Considering worst case Zth conditions http://www.genesicsemi.com/index.php/sic-products/thyristors
November 2010 Preliminary Datasheet http://www.genesicsemi.com Page 3 of 3 GA040TH65 Figure 7: Typical Reverse Recovery Characteristics at 25 °C Figure 8: Typical Transient Thermal Impedance
Revision History
Date Revision Comments Supersedes 2010/11/13 1 First generation release Published by GeneSiC Semiconductor, Inc.
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Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any wa rranty and liability aris ing out of use or application of an y product. No license, express or i mplied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not de signed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in deat h, personal injury and/or property damage.