G9013 ETL | Alldatasheet
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ISSUED DATE :2004/11/18 REVISED DATE : GG 99 00 11 33 NN PP NN EE PP II TT AA XX II AA LL TT RR AA NN SS II SS TT OO RR
Description
The G9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation. Package Dimensions A 4.45 4.7 D 4.44 4.7 S1 1.02 - E 3.30 3.81 b 0.36 0.51 L 12.70 - b1 0.36 0.76 e1 1.150 1.390 C 0.36 0.51 e 2.42 2.66 Absolute Maximum Ratings at Ta = 25 :::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 20 V Emitter to Base Voltage VEBO 5 V Collector Current IC 500 mA Total Power Dissipation PD 625 mW Characteristics at Ta = 25 :::: Symbol Min. Typ. Max. Unit Test Conditions BVCBO 40 - - V IC=100uA , IE=0 BVCEO 20 - - V IC=1mA, IB=0 BVEBO 5 - - V IE=100uA, IC=0 ICBO - - 100 nA VCB=25V, IE=0 IEBO - - 100 nA VEB=3V, IC=0 VCE(sat) - - 0.6 V IC=500mA, IB=50mA VBE(sat) - - 1.2 V IC=500mA, IB=50mA VBE(on) - - 0.9 V VCE=1V, IC=10mA hFE1 112 180 300 VCE=1V, IC=50mA hFE2 40 - - VCE=1V, IC=500mA fT 100 - - MHz VCE=1V, IC=10mA, f=100MHz Cob - - 8 pF VCB=10V, f=1MHz Classification Of hFE1 Rank G H L hFE1 112 - 166 144 - 202 176 - 300 L e1 b e S E A T IN G P L A N E A D C S 1 E TO-92
ISSUED DATE :2004/11/18 REVISED DATE : Characteristics Curve
ISSUED DATE :2004/11/18 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165