G8550S ETL | Alldatasheet
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Features
- High DC Current gain: 100-500 at IC= 150mA *Complementary to G8050S Package Dimensions A 4.45 4.7 D 4.44 4.7 S1 1.02 - E 3.30 3.81 b 0.36 0.51 L 12.70 - b1 0.36 0.76 e1 1.150 1.390 C 0.36 0.51 e 2.42 2.66 Absolute Maximum Ratings at Ta = 25 :::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage VCBO -25 V Collector to Emitter Voltage VCEO -20 V Emitter to Base Voltage VEBO -5 V Collector Current IC -700 mA Total Power Dissipation PD 625 mW Characteristics at Ta = 25:::: Symbol Min. Typ. Max. Unit Test Conditions BVCBO -25 - - V IC=-10uA, IE=0 BVCEO -20 - - V IC=-1mA, IB=0 BVEBO -5 - - V IE=-10uA, , IC=0 ICEX - - -1 uA VCE=-20V, IE=0 *VCE(sat) - - -0.5 V IC=-0.5A, IB=-50mA *VBE(on) - - -1 V VCE=-1V, IC=-150mA *hFE1 100 - 500 VCE=-1V, IC=-150mA *hFE2 - 100 - VCE=-1V, IC=-500mA fT 150 - - MHz VCE=-10V, IC=-20mA, f=100MHz Cob - - 10 pF VCB=-10V, f=1MHz * Pulse Test: Pulse Width 380us, Duty Cycle 2% Classification Of hFE1 Rank C D E Range 100-180 160-300 250-500 TO-92
G8550S Page: 2/3 ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B Characteristics Curve
G8550S Page: 3/3 ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165