G8051S ETL | Alldatasheet
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*Collector current up to 700mA *Collector – Emitter voltage up to 20V *Complementary to G8551S Package Dimensions A 4.45 4.7 D 4.44 4.7 S1 1.02 - E 3.30 3.81 b 0.36 0.51 L 12.70 - b1 0.36 0.76 e1 1.150 1.390 C 0.36 0.51 e 2.42 2.66 Absolute Maximum Ratings (Ta = 25:,unless otherwise specified) Parameter Ratings Unit Collector to Base Voltage VCBO 25 V Collector to Emitter Voltage VCEO 20 V Emitter to Base Voltage VEBO 5 V Collect Current(DC) IC 0.7 A Junction Temperature Tj +150 Storage Temperature Range TsTG -55 ~ +150 Total Power Dissipation PD 625 mW Electrical Characteristics(Ta = 25:,unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 25 - - V IC=10uA,IE=0 BVCEO 20 - - V IC=1mA,IB=0 BVEBO 5 - - V IE=10uA,IC=0 ICBO - - 1 uA VCB=20V, IE=0 IEBO - 100 nA VBE=6V,Ic=0 hFE1 100 - 400 VCE=1V,IC=150mA hFE2 - 100 - VCE=1V,IC=150mA VCE(sat) - - 0.5 V lC=500mA,IB=50mA VBE(on) - - 1 V VCE=1V,Ic=150mA fT 150 - - MHz VCE=10V,Ic=20mA, ,f=100MHz Cob - 10 - pF VCB=10V, IE=0A,f=1MHz Classification Of h FE1 Rank C D E Range 100-180 160-300 250-400 TO-92
G8051S Page: 2/2 ISSUED DATE :2003/11/11 REVISED DATE :2004/11/29B Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165