G8050 ETL | Alldatasheet
Document overview
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Technical content
Features
*High Collector current (IC: 1.5A) *Complementary to G8550 Package Dimensions Millimeter Millimeter A 4.45 4.7 D 4.44 4.7 S1 1.02 - E 3.30 3.81 b 0.36 0.51 L 12.70 - b1 0.36 0.76 e1 1.150 1.390 C 0.36 0.51 e 2.42 2.66 Absolute Maximum Ratings (Ta = 25:,unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 6 V Collect Current IC 1.5 A Base Current IB 0.5 A Junction Temperature Tj +150 Storage Temperature Range TsTG -55 ~ +150 Total Power Dissipation PD 1 W
Electrical Characteristics
(Ta = 25:,unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 40 - - V IC=100uA BVCEO 25 - - V IC=2mA BVEBO 6 - - V IE=100uA ICBO - - 100 nA VCB=35V IEBO - - 100 nA VBE=6V *VCE(sat) - - 0.5 V lC=800mA, IB=80mA *VBE(sat) - - 1.2 V lC=800mA, IB=80mA *VBE(on) - - 1 V VCE=1V, IC=10mA *hFE1 45 - - VCE=1V, IC=5mA *hFE2 120 - 500 VCE=1V, IC=100mA *hFE3 40 - - VCE=1V, IC=800mA fT 100 - - MHz VCE=10V, IC=50mA, f=100MHz Cob - 9 - pF VCB=10V, IE=0, f=1MHz * Pulse Test: Pulse Width 380s, Duty Cycle 2% Classification Of hFE2 Rank C D E Range 120 ~ 200 160 ~ 320 250 ~ 500 L e1 b e S E A T IN G P L A N E A D C S 1 E TO-92
G8050 Page: 2/2 ISSUED DATE :2004/12/27 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 Cob