G6718 ETL | Alldatasheet
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&High Power: 850mW &High Current: 1A Package Dimensions A 4.45 4.7 D 4.44 4.7 S1 1.02 - E 3.30 3.81 b 0.36 0.51 L 12.70 - b1 0.36 0.76 e1 1.150 1.390 C 0.36 0.51 e 2.42 2.66 Absolute Maximum Ratings (TA=25 ):::: Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 100 V Collector to Emitter Voltage VCEO 100 V Emitter to Base Voltage VEBO 5 V Collector Current (DC) IC 1 A Collector Current (Pulse) IC 2 A Base Current IB 200 mA Total Device Dissipation PD 850 mW Junction Temperature TJ 150 : Storage Temperature Tstg -55 ~ +150 : Electrical Characteristics (TA = 25: unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 100 - - V IC=100uA, IE=0 BVCEO 100 - - V IC=1mA, IB=0 BVEBO 5 - - V IE=10uA, IC=0 ICBO - - 100 nA VCB=80V, IE=0 *VCE(sat) - - 350 mV IC=350mA, IB=35mA *hFE1 80 - - VCE=1V, IC=50mA *hFE2 50 - 300 VCE=1V, IC=250mA *hFE3 20 - - VCE=1V, IC=500mA fT 50 - - MHz VCE=10V, IE=50mA, f=100MHz Cob - - 20 pF VCB=10V, IE=0, f=1MHz *Pulse Test: Pulse Width 380s, Duty Cycle 2% Classification Of hFE2 Rank A B Range 50 ~ 115 95 ~ 300 L e1 b e S E A T IN G P L A N E A D C S 1 E TO-92
ISSUED DATE :2005/09/05 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165