G6401 ETL | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
&Ultra Low RDS(ON) &Fast Switching &1.8V Gate Rated
Applications
&Power Management in Notebook Computer &Portable Equipment &Battery Powered System. Package Dimensions A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0C 10C Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS f8 V Continuous Drain Current3 ID @TA=25: -4.3 A Continuous Drain Current3 ID @TA=70: -3.4 A Pulsed Drain Current1 IDM -12 A Power Dissipation PD @TA=25: 1.38 W Linear Derating Factor 0.01 W/ Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient3 Max. Rthj-a 90 /W BVDSS -12V RDS(ON) 50m ID -4.3A Pb Free Plating Product
ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -12 - - V VGS=0, ID=-250uA Breakdown Voltage Temperature Coefficient æBVDSS/æTj - -0.01 - V/: Reference to 25:, ID=-1mA Gate Threshold Voltage VGS(th) - - -1.0 V VDS= VGS, ID=-250uA Forward Transconductance gfs - 12 - S VDS=-5.0V, ID=-4.0A Gate-Source Leakage Current IGSS - - D100 nA VGS= D8V Drain-Source Leakage Current(Tj=25:) - - -1 uA VDS=-16V, VGS=0 Drain-Source Leakage Current(Tj=70:) IDSS - - -25 uA VDS=-12V, VGS=0 - - 50 VGS=-4.5V, ID=-4.3A - - 85 VGS=-2.5V, ID=-2.5A Static Drain-Source On-Resistance2 RDS(ON) - - 125 mŁ VGS=-1.8V, ID=-2.0A Total Gate Charge2 Qg - 15 24 ID=-4.0A Gate-Source Charge Qgs - 1.3 - VDS=-12V Gate-Drain (“Miller”) Change Qgd - 4 - nC VGS=-4.5V Turn-on Delay Time2 Td(on) - 8 - Rise Time Tr - 11 - Turn-off Delay Time Td(off) - 54 - Fall Time Tf - 36 - ns VDS=-10V ID=-1A VGS=-10V RG=3.3Ł RD=10Ł Input Capacitance Ciss - 985 1580 Output Capacitance Coss - 180 - Reverse Transfer Capacitance Crss - 160 - pF VGS=0V VDS=-15V f=1.0MHz Source-Drain Diode Forward On Voltage2 VSD - - -1.2 V IS=-1.2A, VGS=0 Reverse Recovery Time2 Trr - 39 - ns Reverse Recovery Charge Qrr - 26 - nC IS=-4.0A, VGS=0 dI/dt=100A/us Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270:/W when mounted on min. copper pad. Characteristics Curve
ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B
ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165