G411SD ETL | Alldatasheet
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Technical content
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Description
The G411SD is designed for low power rectification Package Dimensions A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0C 10C Absolute Maximum Ratings at Ta = 25 :::: Parameter Symbol Ratings Unit Junction Temperature Tj +125 Storage Temperature Tstg -40 ~ +125 Maximum Recurrent Peak Reverse Voltage VRRM 40 V Maximum RMS Voltage VRMS 28 V Maximum DC Blocking Voltage VDC 20 V Peak Forward Surge Current at 8.3mSec single half sine-wave IFSM 3 A Typical Junction Capacitance between Terminal CJ 20 pF Maximum Average Forward Rectified Current Io 0.5 A Total Power Dissipation PD 225 mW Characteristics at Ta = 25 :::: Characteristics Symbol Typ. Unit Test Condition Maximum Instantaneous Forward Voltage VF(1) 0.3 V IF = 10mA Maximum Instantaneous Forward Voltage VF(2) 0.5 V IF =500mA Maximum Average Reverse Current IR 30 uA VR = 10V
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