G3407

G3407 ETL | Alldatasheet

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□ CORPORATION□ □ ISSUED□DATE□ □ :2007/01/15 REVISED□DATE□: TPU.34)QBDLBHF* GG 33 44 00 77□□ PP -- CC HH AA NN NN EE LL □□ EE NN HH AA NN CC EE MM EE NN TT □□ MM OO DD EE □□ PP OO WW EE RR □□ MM OO SS FF EE TT □□ Description□ The□G3407□uses□advanced□trench□technology□to□provide□excellent□on-resistance□with□low□gate□change.□ □ The□device□is□suitable□for□use□as□a□load□switch□or□in□PWM□applications.□ Features□ *Lower□Gate□Charge□ *Small□Package□Outline□ *RoHS□Compliant□ Package□Dimensions□ Absolute□Maximum□Ratings□ Parameter□ Symbol□ Ratings□ Unit□ Drain-Source□Voltage□ VDS□ -30□ V□ □ Gate-Source□Voltage□ VGS□ ±20□ V□ □ Continuous□Drain□Current3□ ID□@TA=25:□ -4.1□ A□ □ Continuous□Drain□Current3□ ID□@TA=70:□ -3.5□ A□ □ Pulsed□Drain□Current1□ IDM□ -20□ A□ □ Power□Dissipation□ PD□@TA=25:□ 1.38□ W□ □ Linear□Derating□Factor□ □ 0.01□ W/:□ □ Operating□Junction□and□Storage□Temperature□Range□ Tj,□Tstg□ -55□~□+150□ :□ □ Thermal□Data□ Parameter□ Symbol□ Ratings□ Unit□ □ Thermal□Resistance□Junction-ambient3□Max.□ Rthj-a□ □ □ 90□ :/W□ □ Pb□Free□Plating□Product□

□ CORPORATION□ □ ISSUED□DATE□ □ :2007/01/15 REVISED□DATE□: Electrical□Characteristics□(Tj□=□25::::□unless□otherwise□specified)□ Parameter□ Symbol□ Min.□ Typ.□ Max.□ Unit□ Test□Conditions□ Drain-Source□Breakdown□Voltage□ BVDSS□ -30□ -□ -□ V□ □ VGS=0,□ID=-250uA□ □ Gate□Threshold□Voltage□ VGS(th)□ -1.0□ -□ -3.0□ V□ □ VDS=VGS,□ID=-250uA□ □ Forward□Transconductance□ gfs□ -□ 8.2□ -□ S□ □ VDS=-5V,□ID=-4A□ □ Drain-Source□Leakage□Current(Tj=25:)□ -□ -□ -1□ uA□ □ VDS=-30V,□VGS=0□ □ Drain-Source□Leakage□Current(Tj=55:)□ IDSS□ Static□Drain-Source□On-Resistance□ RDS(ON)□ -□ -□ 87□ m□ □ VGS=-4.5V,□ID=-3.0A□ □ Gate-Source□Charge□ Qgs□ -□ 3.1□ -□ nC□ □ ID=-4A□ □ VDS=-15V□ □ VGS=-4.5V□ □ Turn-on□Delay□Time2□ Td(on)□ -□ 8.6□ -□ Turn-off□Delay□Time□ Td(off)□ -□ 28.2□ -□ ns□ □ VDS=-15V□ □ VGS=-10V□ □ RG=3□ □ RL=3.6□ Input□Capacitance□ Ciss□ -□ 700□ 840□ Output□Capacitance□ Coss□ -□ 120□ -□ Reverse□Transfer□Capacitance□ Crss□ -□ 75□ -□ pF□ □ VGS=0V□ □ VDS=-15V□ □ f=1.0MHz□ □ Source-Drain□Diode□ Parameter□ Symbol□ Min.□ Typ.□ Max.□ Unit□ Test□Conditions□ Forward□On□Voltage2□ VSD□ -□ -□ -1.0□ V□ □ IS=-1.0A,□VGS=0V□ □ Reverse□Recovery□Charge□ Qrr□ -□ 15□ -□ nC□ □ IS=-4A,□VGS=0V□ □ dI/dt=100A/s□ □ Continuous□Source□Current□(Body□Diode)□ IS□ -□ -□ -2.2□ A□ □ VD=VG=0V,□VS=-1.0V□ □ Notes:□1.□Pulse□width□limited□by□Max.□junction□temperature.□

□ CORPORATION□ □ ISSUED□DATE□ □ :2007/01/15 REVISED□DATE□: Characteristics□Curve□ 0.000001□ 0.00001□ 0.0001□ 0.001□ 0.01□ 0.1□ 10□ Fig□5.□On-Resistance□ □ v.s.□Gate-Source□Voltage□ Fig□6.□Body□Diode□Characteristics□ Fig□1.□Typical□Output□Characteristics□ Fig□2.□Transfer□Characteristics□ Fig□3.□On-Resistance□v.s.□Drain□ Current□and□Gate□Voltage□ Fig□4.□On-Resistance□v.s.□ □ Junction□Temperature□

□ CORPORATION□ □ ISSUED□DATE□ □ :2007/01/15 REVISED□DATE□: □ □ Important□Notice:□ □ All□rights□are□reserved.□Reproduction□in□whole□or□in□part□is□prohibited□without□the□prior□written□approval□of□GTM.□ □ GTM□reserves□the□right□to□make□changes□to□its□products□without□notice.□ □ GTM□semiconductor□products□are□not□warranted□to□be□suitable□for□use□in□life-support□Applications,□or□systems.□ □ GTM□assumes□no□liability□for□any□consequence□of□customer□product□design,□infringement□of□patents,□or□application□assistance.□ Head□Office□And□Factory:□ □ China:□(201203)□No.255,□Jang-Jiang□Tsai-Lueng□RD.□,□Pu-Dung-Hsin□District,□Shang-Hai□City,□China□ Fig□7.□Maximum□Safe□Operating□Area□ Fig□8.□Single□Pulse□Power□Rating□ Junction-to-Ambient□ v.s.□Junction□Temperature□ Fig□9.□Gate□Charge□Characteristics□ Fig□10.□Typical□Capacitance□Characteristics□ Fig□11.□Normalized□Maximum□Transient□Thermal□Impedance□ Curve□