G3018 ETL | Alldatasheet
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Technical content
Features
&Low on-resistance. &Fast switching speed. &Low voltage drive (2.5V) makes this device ideal for portable equipment. &Easily designed drive circuits. &Easy to parallel. Package Dimensions A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0° 10° Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS f20 V Continuous Drain Current3 ID @TA=25: 115 mA Continuous Drain Current3 ID @TA=100: 75 mA Pulsed Drain Current1,2 IDM 800 mA Power Dissipation PD @TA=25: 0.225 W Linear Derating Factor 0.0018 W/ Operating Junction and Storage Temperature Range Tj, Tstg -40 ~ +150 Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient3 Max. Rthj-a 556 /W BVDSS 30V RDS(ON) 8 ID 115mA Pb Free Plating Product
G3018 Page: 2/4 ISSUED DATE :2005/11/30 REVISED DATE : Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 0.8 - 2.0 V VDS=VGS, ID=0.1mA Forward Transconductance gfs 20 - - mS VDS=3V, ID=10mA Gate-Source Leakage Current IGSS - - ±1 uA VGS= ±20V Drain-Source Leakage Current IDSS - - 1 uA VDS=30V, VGS=0 - 5 8 VGS=4V, ID=10mA Static Drain-Source On-Resistance RDS(ON) - 7 13 VGS=2.5V, ID=1mA Input Capacitance Ciss - - 50 Output Capacitance Coss - - 25 Reverse Transfer Capacitance Crss - - 5 pF VGS=0V VDS=5V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - 0.84 1.5 V IS=100mA, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270:/W when mounted on Min. copper pad.
G3018 Page: 3/4 ISSUED DATE :2005/11/30 REVISED DATE : Characteristics Curve
G3018 Page: 4/4 ISSUED DATE :2005/11/30 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165