G2SD655 ETL | Alldatasheet
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G2SD655 Page: 1/3 ISSUED DATE :2004/05/24 REVISED DATE :2004/11/29B L e1 b e S E A T IN G P L A N E A D C S 1 E GG 22 SS DD 66 55 55 SS ii ll ii cc oo nn NN PP NN EE pp ii tt aa xx ii aa ll Application Low frequency power amplifier, Muting. Package Dimensions A 4.45 4.7 D 4.44 4.7 S1 1.02 - E 3.30 3.81 b 0.36 0.51 L 12.70 - b1 0.36 0.76 e1 1.150 1.390 C 0.36 0.51 e 2.42 2.66 Absolute Maximum Ratings (Ta = 25:) Parameter Ratings Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 15 V Emitter to Base Voltage VEBO 5 V Collect Current(DC) IC 0.7 A Collect peak current IC(peak) 1.0 A Junction Temperature Tj +150 Storage Temperature Range Tstg -55 ~ +150 Total Power Dissipation PD 500 mW Electrical Characteristics(Ta = 25:) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 30 - - V IC=10uA ,IE=0 BVCEO 15 - - V IC=1mA,RBE= BVEBO 5 - - V IE=10uA,IC=0 ICBO - - 1.0 uA VCB=20V, IE=0 VBE - - 1.0 V VCE=1V,IC=150mA VCE(sat) - 0.15 0.5 V IC=500mA, IB=50mA *2 hFE1 *1 250 - 1200 VCE=1V, IC=150mA *2 fT - 250 - MHz VCE=1V, IC=150mA Notes: 1. The G2SD655 is grouped by hFE as follows. 2. Pulse test Classification of Rank Rank D E F Range 250-500 400-800 600-1200 TO-92
G2SD655 Page: 2/3 ISSUED DATE :2004/05/24 REVISED DATE :2004/11/29B Characteristics Curve
G2SD655 Page: 3/3 ISSUED DATE :2004/05/24 REVISED DATE :2004/11/29B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165