G2N7002 ETL | Alldatasheet
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G2N7002 Page: 1/3 ISSUED DATE :2003/06/27 REVISED DATE :2006/01/17C TPU.34)QBDLBHF* GG 22 NN 77 00 00 22 NN -- CC HH AA NN NN EE LL EE NN HH AA NN CC EE MM EE NN TT MM OO DD EE PP OO WW EE RR MM OO SS FF EE TT
Description
The G2N7002 is universally used for all commercial-industrial surface mount applications. Package Dimensions A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0° 10° Absolute Maximum Ratings at Ta = 25:::: Parameter Symbol Ratings Unit Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 : Drain-Source Voltage VDS 60 V VGS ±20 V Gate-Source Voltage - Continuous - Non-repetitive (tp 50us) VGSM ±40 V Continuous Drain Current (1) ID 500 mA Pulsed Drain Current (2) IDM 800 mA Power Dissipation PD 225 mW Thermal Resistance ,Junction-to-Ambient RthJA 556 /W: Electrical Characteristics (Tj = 25 ::::unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 60 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 1 - 2.5 V VDS=2.5V, ID=0.25mA Gate Body Leakage Current IGSS - - ±100 nA VGS=±20V, VDS=0 Zero Gate Voltage Drain Current IDSS - - 1 uA VDS=60V, VGS=0 On-State Drain Current ID(ON) 500 - - mA VDS=7.5V, VGS=10V - - 5 ID=50mA, VGS=5V Static Drain-Source on-State Resistance RDS(ON) - - 4.5 ID=500mA, VGS=10V Forward Transconductance GFS 80 - - mS VDS>2 VDS(ON), ID=200mA Input Capacitance Ciss - - 50 pF Output Capacitance Coss - - 25 pF Reverse Transfer Capacitance Crss - - 5 pF VDS=25V, VGS=0V, f=1MHz (1)The Power Dissipation of the package may result in a continuous train current. (2)Pulse Width 300us, Duty cycle 2%. BVDSS 60V RDS(ON) 4.5 ID 500mA Pb Free Plating Product
G2N7002 Page: 2/3 ISSUED DATE :2003/06/27 REVISED DATE :2006/01/17C Characteristics Curve
G2N7002 Page: 3/3 ISSUED DATE :2003/06/27 REVISED DATE :2006/01/17C Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165