G2N7000 ETL | Alldatasheet
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□ □ ISSUED□DATE□ □ :2004/02/18□ REVISED□DATE□:2006/10/30F GG 22 NN 77 00 00 00□□ □□ □□ NN -- CC HH AA NN NN EE LL □□ EE NN HH AA NN CC EE MM EE NN TT □□ MM OO DD EE □□ MM OO SS FF EE TT □□ Description□ The□G2N7000□is□designed□for□high□voltage,□high□speed□applications□such□as□switching□regulators,□converters,□ solenoid□and□relay□drivers.□ Package□Dimensions□ Absolute□Maximum□Ratings□at□Ta□=□25::::□ Parameter□ Symbol□ Ratings□ Unit□ Operating□Junction□and□Storage□Temperature□Range□ Tj,□Tstg□ -55□~□+150□ :□ □ Drain-Source□Voltage□ VDSS□ 60□ V□ □ -Continuous□ -Non-repetitive□(tp 50us)□ VGSM□ ±40□ V□ □ Drain□Current□ □ -Continuous□ -□Pulsed□ ID□ IDM□ 200□ 500□ mA□ □ Ta=25:□ 0.35□ Power□Dissipation□ Derate□above□25:□ □ PD□ 2.8□ W□ □ mW/:□ □ Thermal□Resistance□,Junction-to-Ambient□ RJA□ 357□ /W: □ □ Maximum□Lead□Temperature□for□Soldering□Purposes,1/16”□from□ Electrical□Characteristics□(Tc=□25:□unless□otherwise□noted)□ Parameter□ Symbol□ Min.□ Typ.□ Max.□ Unit□ Test□Conditions□ Drain-Source□Breakdown□Voltage□ V(BR)DSS□ 60□ -□ -□ V□ □ VGS=0,□ID=250uA□ □ Gate□Threshold□Voltage□ VGS(th)□ 0.8□ -□ 3.0□ V□ □ VDS=□VGS,□ID=1.0mA□ □ On-State□Drain□Current□ ID(ON)□ 75□ -□ -□ mA□ □ VGS□=4.5V□,VDS=10V□ □ -□ -□ 5.0□ VGS=10V,□ID=500mA□ □ Static□Drain-Source□on-State□Resistance□ RDS(ON)□ -□ -□ 6.0□ □ □ VGS=4.5V,□ID=75mA□ □ -□ -□ 2.5□ VGS=10V,□ID=500mA□ □ Drain-Source□on-Voltage□ □ VDS(ON)□ -□ -□ 0.45□ V□ □ VGS=4.5V,□ID=75mA□ □ Forward□Transconductance□ GFS□ 100□ -□ -□ mS□ □ VDS=10□V,□ID=200mA□ □ Input□Capacitance□ Ciss□ -□ -□ 60□ Output□Capacitance□ Coss□ -□ -□ 25□ Reverse□Transfer□Capacitance□ Crss□ -□ -□ 5□ L e1 b e S E A T IN G □ P L A N E □□□□b1 A D C S 1 E TO-92□
□ □ ISSUED□DATE□ □ :2004/02/18□ REVISED□DATE□:2006/10/30F Switching□Characteristics□(Note□1)□ Turn-off□Delay□Time□ toff□ -□ -□ 10□ ns□ □ VDD=15V,□ID=500mA□ □ RG=25,□RL=30,□Vgen=10V□ □ Note□1.□Pulse□Test:□Pulse□Width 300us,□Duty□cycle 2%.□ Characteristics□Curve□ □ □ Important□Notice:□ □ All□rights□are□reserved.□Reproduction□in□whole□or□in□part□is□prohibited□without□the□prior□written□approval□of□GTM.□ □ GTM□reserves□the□right□to□make□changes□to□its□products□without□notice.□ □ GTM□semiconductor□products□are□not□warranted□to□be□suitable□for□use□in□life-support□Applications,□or□systems.□ □ GTM□assumes□no□liability□for□any□consequence□of□customer□product□design,□infringement□of□patents,□or□application□assistance.□ Head□Office□And□Factory:□ □ China:□(201203)□No.255,□Jang-Jiang□Tsai-Lueng□RD.□,□Pu-Dung-Hsin□District,□Shang-Hai□City,□China□