G2N5551 ETL | Alldatasheet
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*Complementary to PNP Type G2N5401 *High Collector – Emitter Breakdown Voltage (VCEO > 160V (@IC=1mA) Package Dimensions A 4.45 4.7 D 4.44 4.7 S1 1.02 - E 3.30 3.81 b 0.36 0.51 L 12.70 - b1 0.36 0.76 e1 1.150 1.390 C 0.36 0.51 e 2.42 2.66 Absolute Maximum Ratings at Ta = 25 :::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage VCBO 180 V Collector to Emitter Voltage VCEO 160 V Emitter to Base Voltage VEBO 6 V Collector Current IC 600 mA Total Power Dissipation PD 625 mW Characteristics at Ta = 25:::: Symbol Min. Typ. Max. Unit Test Conditions BVCBO 180 - - V IC=100uA , IE=0 BVCEO 160 - - V IC=1mA,IB=0 BVEBO 6 - - V IE=10uA ,IC=0 ICBO - - 50 nA VCB=120V, IE=0 IEBO - - 50 nA VEB=4V, IC=0 *VCE(sat)1 - - 0.15 V IC=10mA, IB=1mA *VCE(sat)2 - - 0.2 V IC=50mA, IB=5mA *VBE(sat)1 - - 1 V IC=10mA, IB=1mA *VBE(sat)2 - - 1 V IC=50mA, IB=5mA *hFE1 80 - - VCE=5V, IC=1mA *hFE2 80 160 400 VCE=5V, IC=10mA *hFE3 50 - - VCE=5V, IC=50mA fT 100 300 MHz VCE=10V, IC=10mA, f=100MHz Cob - - 6 pF VCB=10V, f=1MHz, IE=0 * Pulse Test: Pulse Width 380us, Duty Cycle 2% Classification OF h FE2 Rank A N C Range 80-200 100-250 160-400 TO-92
G2N5551 Page: 2/3 ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B Characteristics Curve
G2N5551 Page: 3/3 ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165