G2402 ETL | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
&Ultra Low On-Resistance &Fast Switching
Applications
&Power Management in Notebook Computer &Portable Equipment &Battery Powered System. Package Dimensions A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0C 10C Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS f12 V Continuous Drain Current3, VGS@4.5V ID @TA =25: 3.2 A Continuous Drain Current3, VGS@4.5V ID @TA =70: 2.6 A Pulsed Drain Current1,2 IDM 7.4 A Power Dissipation PD @TA =25: 1.38 W Linear Derating Factor 0.01 W/ Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient3 Max. Rthj-a 90 /W BVDSS 20V RDS(ON) 250m ID 3.2A Pb Free Plating Product
ISSUED DATE :2004/11/22 REVISED DATE :2005/03/22B Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 20 - - V VGS=0, ID=250uA Breakdown Voltage Temperature Coefficient æBVDSS/æTj - 0.1 - V/: Reference to 25:, ID=1mA Gate Threshold Voltage VGS(th) 0.7 - 1.2 V VDS= VGS, ID=250uA Forward Transconductance gfs - 6 - S VDS=10V, ID=0.47A Gate-Source Leakage Current IGSS - - D100 nA VGS= D12V Drain-Source Leakage Current(Tj=25:) - - 1.0 uA VDS=20V, VGS=0 Drain-Source Leakage Current(Tj=70:) IDSS - - 10 uA VDS=20V, VGS=0 - - 250 ID=0.93A, VGS=4.5V Static Drain-Source On-Resistance2 RDS(ON) - - 350 mŁ ID=0.47A, VGS=2.7V Total Gate Charge2 Qg - 4.4 - ID=3.6A Gate-Source Charge Qgs - 0.6 - nC VDS=10V Gate-Drain (“Miller”) Change Qgd - 1.9 - VGS=4.5V Turn-on Delay Time2 Td(on) - 5.2 - Rise Time Tr - 37 - Turn-off Delay Time Td(off) - 15 - Fall Time Tf - 5.7 - ns VDS=10V ID=3.6A RG=6Ł VGS=5v RD=2.8Ł Input Capacitance Ciss - 145 - Output Capacitance Coss - 100 - Reverse Transfer Capacitance Crss - 50 - pF VGS=0V VDS=10V f=1.0MHz Source-Drain Diode Forward On Voltage2 VSD - - 1.2 V IS=1.6A, VGS=0 Tj=25: Continuous Source Current(Body Diode) IS - - 1 A VD= VG=0V, VS=1.2V Pulsed Source Current (Body Diode) 1 ISM - - 7.4 A Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board;270:/w when mounted on min. copper pad. Characteristics Curve
ISSUED DATE :2004/11/22 REVISED DATE :2005/03/22B
ISSUED DATE :2004/11/22 REVISED DATE :2005/03/22B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165