G2314 ETL | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
*Capable of 2.5V gate drive *Low on-resistance Package Dimensions A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0C 10C Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS f12 V Continuous Drain Current3, VGS@4.5V ID @TA=25: 3.5 A Continuous Drain Current3, VGS@4.5V ID @TA=70: 2.8 A Pulsed Drain Current1,2 IDM 10 A Power Dissipation PD @TA=25: 1.38 W Linear Derating Factor 0.01 W/ Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient3 Max. Rthj-a 90 /W BVDSS 20V RDS(ON) 75m ID 3.5A Pb Free Plating Product
ISSUED DATE :2005/05/16 REVISED DATE : Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 20 - - V VGS=0, ID=250uA Breakdown Voltage Temperature Coefficient æBVDSS /æTj - 0.02 - V/: Reference to 25:, ID=1mA Gate Threshold Voltage VGS(th) 0.5 - 1.2 V VDS=VGS, ID=250uA Forward Transconductance gfs - 7.0 - S VDS=5V, ID=3A Gate-Source Leakage Current IGSS - - D100 nA VGS= D12V Drain-Source Leakage Current(Tj=25:) - - 1 uA VDS=20V, VGS=0 Drain-Source Leakage Current(Tj=70:) IDSS - - 10 uA VDS=16V, VGS=0 - - 75 VGS=4.5V, ID=3.5A Static Drain-Source On-Resistance RDS(ON) - - 125 mŁ VGS=2.5V, ID=1.2A Total Gate Charge2 Qg - 4 7 Gate-Source Charge Qgs - 0.7 - Gate-Drain (“Miller”) Change Qgd - 2 - nC ID=3A VDS=16V VGS=4.5V Turn-on Delay Time2 Td(on) - 6 - Rise Time Tr - 8 - Turn-off Delay Time Td(off) - 10 - Fall Time Tf - 3 - ns VDS=15V ID=1A VGS=5V RG=3.3Ł RD=15Ł Input Capacitance Ciss - 230 370 Output Capacitance Coss - 55 - Reverse Transfer Capacitance Crss - 40 - pF VGS=0V VDS=20V f=1.0MHz Gate Resistance Rg - 1.1 1.7 Ł f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - 1.2 V IS=1.2A, VGS=0V Reverse Recovery Time Trr - 16 - ns Reverse Recovery Charge Qrr - 8 - nC IS=3A, VGS=0V dI/dt=100A/s Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2% . 3. Surface mounted on 1 in2 copper pad of FR4 board, t 10sec; 270 /W when mounted on Min. : copper pad.
ISSUED DATE :2005/05/16 REVISED DATE : Characteristics Curve Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature
ISSUED DATE :2005/05/16 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform