G2310 ETL | Alldatasheet
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*Simple Drive Requirement *Small Package Outline Package Dimensions A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0C 10C Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS f20 V Continuous Drain Current3, VGS@4.5V ID @TA=25: 3.0 A Continuous Drain Current3, VGS@4.5V ID @TA=70: 2.3 A Pulsed Drain Current1,2 IDM 10 A Power Dissipation PD @TA=25: 1.38 W Linear Derating Factor 0.01 W/ Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient3 Max. Rthj-a 90 /W BVDSS 60V RDS(ON) 90m ID 3A Pb Free Plating Product
ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 60 - - V VGS=0, ID=250uA Breakdown Voltage Temperature Coefficient æBVDSS /æTj - 0.05 - V/: Reference to 25:, ID=1mA Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA Forward Transconductance gfs - 5.0 - S VDS=5V, ID=3A Gate-Source Leakage Current IGSS - - D100 nA VGS= D20V Drain-Source Leakage Current(Tj=25:) - - 10 uA VDS=60V, VGS=0 Drain-Source Leakage Current(Tj=70:) IDSS - - 25 uA VDS=48V, VGS=0 - - 90 VGS=10V, ID=3A Static Drain-Source On-Resistance RDS(ON) - - 120 mŁ VGS=4.5V, ID=2A Total Gate Charge2 Qg - 6 10 Gate-Source Charge Qgs - 1.6 - Gate-Drain (“Miller”) Change Qgd - 3 - nC ID=3A VDS=48V VGS=4.5V Turn-on Delay Time2 Td(on) - 6 - Rise Time Tr - 5 - Turn-off Delay Time Td(off) - 16 - Fall Time Tf - 3 - ns VDS=30V ID=1A VGS=10V RG=3.3Ł RD=30Ł Input Capacitance Ciss - 490 780 Output Capacitance Coss - 55 - Reverse Transfer Capacitance Crss - 40 - pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - 1.2 V IS=1.2A, VGS=0V Reverse Recovery Time Trr - 25 - ns Reverse Recovery Charge Qrr - 26 - nC IS=3A, VGS=0V dI/dt=100A/s Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2% . 3. Surface mounted on 1 in2 copper pad of FR4 board;270:/W when mounted on min. copper pad.
ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B Characteristics Curve Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature
ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform