G2307 ETL | Alldatasheet
Document overview
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Technical content
ISSUED DATE :2004/11/02 REVISED DATE :2005/10/13C TPU.34)QBDLBHF* GG 22 33 00 77 PP -- CC HH AA NN NN EE LL EE NN HH AA NN CC EE MM EE NN TT MM OO DD EE PP OO WW EE RR MM OO SS FF EE TT
Description
The G2307 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The G2307 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Applications
&Power Management in Notebook Computer &Portable Equipment &Battery Powered System. Package Dimensions A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0C 10C Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS -16 V Gate-Source Voltage VGS f8 V Continuous Drain Current3 ID @TA=25: -4.0 A Continuous Drain Current3 ID @TA=70: -3.3 A Pulsed Drain Current1 IDM -12 A Power Dissipation PD @TA=25: 1.38 W Linear Derating Factor 0.01 W/: Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 : Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient3 Max. Rthj-a 90 :/W Pb Free Plating Product BVDSS -16V RDS(ON) 60m ID -4.0A
ISSUED DATE :2004/11/02 REVISED DATE :2005/10/13C Electrical Characteristics (Tj = 25:::: Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -16 - - V VGS=0, ID=-250uA Breakdown Voltage Temperature Coefficient æBVDSS/æTj - -0.01 - V/: Reference to 25:, ID=-1mA Gate Threshold Voltage VGS(th) - - -1.0 V VDS= VGS, ID=-250uA Forward Transconductance gfs - 12 - S VDS=-5.0V, ID=-4.0A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±8V Drain-Source Leakage Current(Tj=25:) - - -1 uA VDS=-16V, VGS=0 Drain-Source Leakage Current(Tj=70:) IDSS - - -25 uA VDS=-12V, VGS=0 - - 60 ID=-4.0A, VGS=-4.5V - - 70 ID=-3.0A, VGS=-2.5V Static Drain-Source On-Resistance2 RDS(ON) m ID=-2.0A, VGS=-1.8V Total Gate Charge2 Qg - 15 24 ID=-4.0A Gate-Source Charge Qgs - 1.3 - nC VDS=-12V Gate-Drain (“Miller”) Change Qgd - 4 - VGS=-4.5V Turn-on Delay Time2 Td(on) - 8 - Rise Time Tr - 11 - Turn-off Delay Time Td(off) - 54 - Fall Time Tf - 36 - ns VDS=-10V ID=-1A VGS=-10V RG=3.3 RD=10 Input Capacitance Ciss - 985 1580 Output Capacitance Coss - 180 - Reverse Transfer Capacitance Crss - 160 - pF VGS=0V VDS=-15V f=1.0MHz Source-Drain Diode Forward On Voltage2 VSD - - -1.2 V IS=-1.2A, VGS=0 Reverse Recovery Time2 Trr - 39 - ns Reverse Recovery Charge Qrr - 26 - nC IS=-4.0A, VGS=0 dI/dt=100A/us Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270:/W when mounted on min. copper pad. Characteristics Curve
ISSUED DATE :2004/11/02 REVISED DATE :2005/10/13C
ISSUED DATE :2004/11/02 REVISED DATE :2005/10/13C Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165