G2300 ETL | Alldatasheet
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*Low on-resistance *Capable of 2.5V gate drive *Small Package Outline Package Dimensions A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0° 10° Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current3 ID @TA=25: 6 A Continuous Drain Current3 ID @TA=70: 4.8 A Pulsed Drain Current1,2 IDM 20 A Power Dissipation PD @TA=25: 1.25 W Linear Derating Factor 0.01 W/: Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 : Thermal Data Parameter Symbol Value Unit Thermal Resistance Junction-ambient3 Max. Rthj-a 100 :/W BVDSS 20V RDS(ON) 28m ID 6A Pb Free Plating Product
ISSUED DATE :2006/07/26 REVISED DATE :2006/11/09B Electrical Characteristics (Tj = 25 ::::unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 20 - - V VGS=0, ID=250uA Breakdown Voltage Temperature Coefficient æBVDSS /æTj - 0.1 - V/: Reference to 25 , I:D=1mA Gate Threshold Voltage VGS(th) 0.5 - 1.0 V VDS=VGS, ID=250uA Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±8V Drain-Source Leakage Current(Tj=25 ) : - - 1 uA VDS=20V, VGS=0 Drain-Source Leakage Current(Tj=70 ): IDSS - - 25 uA VDS=16V, VGS=0 - - 28 VGS=4.5V, ID=6A Static Drain-Source On-Resistance2 RDS(ON) - - 38 m VGS=2.5V, ID=5.2A Total Gate Charge2 Qg - 10 - Gate-Source Charge Qgs - 3.6 - Gate-Drain (“Miller”) Change Qgd - 2 - nC ID=6A VDS=10V VGS=4.5V Turn-on Delay Time2 Td(on) - 8 - Rise Time Tr - 6 - Turn-off Delay Time Td(off) - 19 - Fall Time Tf - 7 - ns VDD=10V ID=1A VGS=4.5V RG=0.2 Input Capacitance Ciss - 550 - Output Capacitance Coss - 120 - Reverse Transfer Capacitance Crss - 80 - pF VGS=0V VDS=15V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - 0.7 1.3 V IS=1.25A, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t 10sec.
ISSUED DATE :2006/07/26 REVISED DATE :2006/11/09B Characteristics Curve Fig 5. Source-Drain Diode Forward Voltage Fig 1. Typical Output Characteristics Fig 2. On-Resistance v.s. Drain Current Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature 0.01 0.02 0.03 0.04 0.05 0.06 0.07
ISSUED DATE :2006/07/26 REVISED DATE :2006/11/09B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 Fig 9. Transfer Characteristics Fig 10. Single Pulse Power Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 11. Normalized Thermal Transient Impedance, Junction to Ambient