G152B ETL | Alldatasheet

Document overview

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Technical content

Features

&Low On-State Resistance:0.3Ł (max) &Ultra High Speed Switching

Applications

&Notebook PCs &Cellular and portable phones &On-board power supplies &Li-ion battery System Package Dimensions A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0C 10C Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS f12 V Continuous Drain Current3 ID -0.7 A Pulsed Drain Current1,2 IDM -2.8 A Power Dissipation PD @TA=25: 0.5 W Linear Derating Factor 0.01 W/ Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient3 Max. Rthj-a 90 /W BVDSS -20V RDS(ON) 0.3 ID -0.7A Pb Free Plating Product

ISSUED DATE :2005/01/26 REVISED DATE :2005/03/22B Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -20 - - V VGS=0, ID=-250uA Breakdown Voltage Temperature Coefficient æBVDSS /æTj - -0.1 - V/: Reference to 25:, ID=-1mA Gate Threshold Voltage VGS(th) -0.5 - -1.2 V VDS=VGS, ID=-1mA Forward Transconductance gfs - 1.5 - S VDS=-10V, ID=-0.4A Gate-Source Leakage Current IGSS - - D100 nA VGS= D12V Drain-Source Leakage Current(Tj=25:) IDSS - - -10 uA VDS=-20V, VGS=0 Static Drain-Source On-Resistance RDS(ON) - 192 500 mŁ VGS=-2.5V, ID=-0.4A Total Gate Charge2 Qg - 5.2 10 Gate-Source Charge Qgs - 1.36 - Gate-Drain (“Miller”) Change Qgd - 0.6 - nC ID=-0.7A VDS=-10.0V VGS=-6.0V Turn-on Delay Time2 Td(on) - 5 - Rise Time Tr - 20 - Turn-off Delay Time Td(off) - 55 - Fall Time Tf - 70 - ns VDD=-10V ID=-0.4A VGS=-5V Input Capacitance Ciss - 180 - Output Capacitance Coss - 120 - Reverse Transfer Capacitance Crss - 60 - pF VGS=0V VDS=-10V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - -1.1 V IS=-0.7A, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2% . 3. Surface mounted on 1 in2 copper pad of FR4 board;270:/W when mounted on min. copper pad.

ISSUED DATE :2005/01/26 REVISED DATE :2005/03/22B Characteristics Curve Fig 1. Drain Current v.s. Drain-Source Voltage Fig 3. Drain-Source On-State Resistance v.s. Gate-Source Voltage Fig 4. Drain-Source On-State Resistance v.s. Drain Current Fig 6. Gate-Source Cut-off Voltage Variance v.s. Ambient Temperature Fig 5. Drain-Source On-State Resistance v.s. Ambient Temperature Fig 2. Drain Current v.s. Gate-Source Voltage

ISSUED DATE :2005/01/26 REVISED DATE :2005/03/22B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 Fig 7. Capacitance v.s. Drain-Source Voltage Fig 9. Gate-Source Voltage v.s. Gate Charge Fig 11. Thermal Resistance v.s. Pulse Width Fig 8. Switching Time v.s. Drain Current Fig 10. Reverse Drain-Current v.s. Source-Drain Voltage