G138 ETL | Alldatasheet
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*Simple Drive Requirement *Small Package Outline Package Dimensions A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0° 10° Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 50 V Gate-Source Voltage VGS ±20 V Continuous Drain Current3, VGS@10V ID @TA=25: 500 mA Continuous Drain Current3, VGS@10V ID @TA=70: 400 mA Pulsed Drain Current1,2 IDM 800 mA Power Dissipation PD @TA=25: 225 mW Linear Derating Factor 0.002 W/: Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 : Thermal Data Parameter Symbol Value Unit Thermal Resistance Junction-ambient3 Max. Rthj-a 556 :/W BVDSS 50V RDS(ON) 3.5 ID 500mA Pb Free Plating Product
ISSUED DATE :2006/03/01 REVISED DATE : Electrical Characteristics (Tj = 25 unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 50 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 0.5 - 2.0 V VDS=VGS, ID=1mA Forward Transconductance gfs - 500 - mS VDS=10V, ID=220mA Gate-Source Leakage Current IGSS - - D100 nA VGS= D20V Drain-Source Leakage Current(Tj=25:) IDSS - - 1 uA VDS=50V, VGS=0 - - 3.5 VGS=10V, ID=220mA Static Drain-Source On-Resistance RDS(ON) - - 6.0 Ł VGS=4.5V, ID=220mA Input Capacitance Ciss - - 50 Output Capacitance Coss - - 25 Reverse Transfer Capacitance Crss - - 5 pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - 1.5 V IS=100mA, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2% . 3. Surface mounted on 1 in2 copper pad of FR4 board; 270:/W when mounted on Min. copper pad.
ISSUED DATE :2006/03/01 REVISED DATE : Characteristics Curve
ISSUED DATE :2006/03/01 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165