G1333 ETL | Alldatasheet
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*Simple Gate Drive *Small Package Outline *Fast Switching Speed Package Dimensions A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0C 10C Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS f12 V Continuous Drain Current3 ID @TA=25: -550 mA Continuous Drain Current3 ID @TA=70: -440 mA Pulsed Drain Current1,2 IDM 2.5 A Total Power Dissipation PD @TA=25: 1.0 W Linear Derating Factor 0.008 W/ Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient3 Max. Rthj-a 125 /W BVDSS -20V RDS(ON) 800m ID -550mA Pb Free Plating Product
ISSUED DATE :2005/03/10 REVISED DATE : Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -20 - - V VGS=0, ID=-250uA Breakdown Voltage Temperature Coefficient æBVDSS /æTj - 0.01 - V/: Reference to 25:, ID=-1mA Gate Threshold Voltage VGS(th) -0.5 - -1.2 V VDS=VGS, ID=-250uA Forward Transconductance gfs - 1 - S VDS=-5V, ID=-550mA Gate-Source Leakage Current IGSS - - D100 nA VGS= D12V Drain-Source Leakage Current(Tj=25:) - - -1 uA VDS=-20V, VGS=0 Drain-Source Leakage Current(Tj=70:) IDSS - - -10 uA VDS=-16V, VGS=0 - - 600 VGS=-10V, ID=-550mA - - 800 VGS=-4.5V, ID=-500mA Static Drain-Source On-Resistance RDS(ON) - - 1000 mŁ VGS=-2.5V, ID=-300mA Total Gate Charge2 Qg - 1.7 2.7 Gate-Source Charge Qgs - 0.3 - Gate-Drain (“Miller”) Change Qgd - 0.4 - nC ID=-500mA VDS=-16V VGS=-4.5V Turn-on Delay Time2 Td(on) - 5 - Rise Time Tr - 8 - Turn-off Delay Time Td(off) - 10 - Fall Time Tf - 2 - ns VDS=-10V ID=-500mA VGS=-5V RG=3.3Ł RD=20Ł Input Capacitance Ciss - 66 105.6 Output Capacitance Coss - 25 - Reverse Transfer Capacitance Crss - 20 - pF VGS=0V VDS=-10V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - -1.2 V IS=-300mA, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t 10sec.
ISSUED DATE :2005/03/10 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode
ISSUED DATE :2005/03/10 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform