G1332E ETL | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
*Simple Gate Drive *Small Package Outline *2KV ESD Rating (Per MIL-STD-883D) Package Dimensions A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0° 10° Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±5 V Continuous Drain Current3 ID @TA=25: 600 mA Continuous Drain Current3 ID @TA=70: 470 mA Pulsed Drain Current1,2 IDM 2.5 A Total Power Dissipation PD @TA=25: 1.0 W Linear Derating Factor 0.008 W/: Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 : Thermal Data Parameter Symbol Value Unit Thermal Resistance Junction-ambient3 Max. Rthj-a 125 :/W BVDSS 20V RDS(ON) 600m ID 600mA Pb Free Plating Product
G1332E Page: 2/4 ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C Electrical Characteristics (Tj = 25 ::::unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 20 - - V VGS=0, ID=250uA Breakdown Voltage Temperature Coefficient æBVDSS /æTj - 0.02 - V/: Reference to 25 , I:D=1mA Gate Threshold Voltage VGS(th) 0.5 - 1.2 V VDS=VGS, ID=250uA Forward Transconductance gfs - 1 - S VDS=5V, ID=600mA Gate-Source Leakage Current IGSS - - ±10 uA VGS= ±5V Drain-Source Leakage Current(Tj=25 ) : - - 1 uA VDS=20V, VGS=0 Drain-Source Leakage Current(Tj=70 ): IDSS - - 10 uA VDS=16V, VGS=0 - - 600 VGS=4.5V, ID=600mA Static Drain-Source On-Resistance RDS(ON) - - 1200 m VGS=2.5V, ID=400mA Total Gate Charge2 Qg - 1.3 2 Gate-Source Charge Qgs - 0.3 - Gate-Drain (“Miller”) Change Qgd - 0.5 - nC ID=600mA VDS=16V VGS=4.5V Turn-on Delay Time2 Td(on) - 4 - Rise Time Tr - 10 - Turn-off Delay Time Td(off) - 15 - Fall Time Tf - 2 - ns VDS=10V ID=600mA VGS=10V RG=3.3 RD=16.7 Input Capacitance Ciss - 38 60 Output Capacitance Coss - 17 - Reverse Transfer Capacitance Crss - 12 - pF VGS=0V VDS=10V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - 1.2 V IS=300mA, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t 10sec.
G1332E Page: 3/4 ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode
G1332E Page: 4/4 ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform