FS8205 FORTUNE | Alldatasheet
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REV. 1.9 F S8205-DS-19_EN AUG 2016 Datasheet FS8205 Dual N-Channel Enhancement Mode Power MOSFET FORTUNE’ Properties For Reference Only
Fortune Semiconductor Corporation 富晶電子股份有限公司 Danshui Dist, New Taipei City 251, Taiwan Tel.：886-2-28094742 Fax：886-2-28094874 www.ic-fortune.com This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to modify the product specif ication without further notice. No liability is assumed by Fortune Semiconductor Corporation as a result of the use of this product. No rights under any pa tent accompany the sale of the product Rev. 1.9 2/2 FORTUNE’ Properties For Reference Only
- Features
1.1 Low on-re sistance
1.1.1 RDS(ON) = 28 mΩ MAX. (V GS = 4.5V, ID = 4A) 1.1.2 RDS(ON) = 37 mΩ MAX. (V GS = 2.5V, ID = 3A) 2. A pplications Li-ion battery management applications 3. O rdering Information Product Number Description Package Type Quantity/Reel FS8205 SOT23-6 package version SOT23-6 3,000 4. P in Assignment For FS8205 w : A~Z or A ~ Z T o p p o i n t s , b o t t o m p o i n t s & w : L o t n o i n f o r m a t i o n 5. A bsolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID @TA = 25℃ Continuous Drain Current3 6 A ID @TA = 70℃ Continuous Drain Current3 5 A IDM Pulsed Drain Current1 25 A PD @TA = 25℃ Total Power Dissipation 1 W Linear Derating Factor 0.008 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Rev. 1.9 3/3 FORTUNE’ Properties For Reference Only
- Thermal Data Symbol Parameter Value Unit Rthj-a Thermal Resistance Junction-ambient3 Max. 125 ℃/W 7. E lectrical Characteristics Electrical Characteristics @Tj = 25℃ ( unless otherwise specified ) Symbol Parameter Test Conditions Min. Typ. Max. Units Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 20 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.1 - V/℃ RDS(ON) Static Drain-Source On-Resistance2 V GS = 4.5V, ID = 4A - 23 28 mΩ VGS = 2.5V, ID = 3A - 30 37 mΩ VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 0.45 - 1.2 V IDSS Drain-Source Leakage Current (Tj = 25℃) VDS =16V, VGS = 0V - - 1 uA Drain-Source Leakage Current (Tj = 70℃) VDS =16V, VGS = 0V - - 25 uA IGSS Gate-Source Leakage VGS = ±10V - - ±0.1 uA 8. Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current (Body Diode) VD = VG = 0V, VS = 1.2V - - 0.83 A VSD Forward On Voltage2 Tj = 25℃, IS = 1.25A, VGS = 0V - - 1.2 V Notes： 1. P ulse width limited by Max. junction temperature. 2. P ulse width ≦ 300us, duty cycle ≦ 2 % . 3. S urface mounted on 1 in 2 copper pad of FR4 board ；208℃/W when mounted on Min. copper pad. Rev. 1.9 4/4 FORTUNE’ Properties For Reference Only
- T ypical Characteristics On-Region characteristics @ T a=25Deg 00 . 511 . 52 Vds, Drain to Source Voltage ( V ) Id, Drain Current ( A ) 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V On-Region characteristics @ T a=125Deg 00 . 5 11 . 5 2 Vds, Drain to Source Voltage ( V ) Id, Drain Current ( A ) 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics On-Resistance Variation with T emperature Vgs=4.5V, Ids=4A 0.2 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 T emperature ( Deg ) Rds(on) - Normalized Drain - Source On-Resistance Gate T hreshold Voltage T emperature Coefficient Vgs=Vdg, Ids=250uA 0.2 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 T emperature ( Deg ) Vth - Normalized Threshold Voltage Fig 3. Normalized On-Resistance Fig 4. Gate Threshold Variation with Temperature Forward Characteristic of Rev erse Diode 0.5 1.5 2.5 -0.3 0.2 0.7 1.2 Vsd, Soucre to Drain Voltage ( V ) Is (A) T a=25Deg T a=125Deg Fig 5. Forward Characteristic of Reverse Diode Rev. 1.9 5/5 FORTUNE’ Properties For Reference Only
Rev. 1.9 6/6 10. Package Information 11. Revision History Version Date Page Description 1.0 2009/08/17 - Version 1.0 released 1.1 2010/01/26 3 Rds25 TYP 28mohm MAX 36mohm Rds45 TYP 22mohm MAX 26mohm 1.2 2010/06/02 3 Rds45 TYP 23mohm MAX 27mohm 1.3 2010/06/10 4 IDSS Test Conditions：VDS=16V VGS=0V 1.4 2010/08/31 3 Revise Pin Assignment 1.5 2010/04/27 4 Rds25 TYP： 30mohm MAX：37mohm Rds45 TYP： 23mohm MAX：28mohm VGS(th) MIN ：0.45V MAX ：1.2V IGSS MAX ：±0.1uA 1.6 2011/09/08 6 Revise Package Outline 1.7 2011/11/02 3 Revise Pin Assignment 1.8 2014/05/22 2 Revised company address 1.9 2016/08/22 3 Revise Package Marking Information FORTUNE’ Properties For Reference Only