FS8820 FORTUNE | Alldatasheet

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REV. 1.2 FS8820-DS-12_EN MAY 2014 Datasheet FS8820 Dual N-Channel Enhancement Mode Power MOSFET FORTUNE' Properties For Reference Only

Fortune Semiconductor Corporation 富晶電子股份有限公司 23F,No.29-5, Sec. 2, Zhongzheng E. Rd., Danshui Dist, New Taipei City 251, Taiwan Tel.：886-2-28094742 Fax：886-2-28094874 www.ic-fortune.com This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to modify the product specification without further notice. No liability is assumed by Fortune Semiconductor Corporation as a result of the use of this product. No rights under any patent accompany the sale of the product FORTUNE' Properties For Reference Only

  1. Features

1.1 Low on-resistance

1.1.1 RDS(ON) = 24 mΩ MAX. (VGS = 4.5V, ID = 6A) 1.1.2 RDS(ON) = 32 mΩ MAX. (VGS = 2.5V, ID = 5A)

1.1.3 ESD Rating: ≧2000V HBM

  1. Applications  Li-ion battery management applications 3. Ordering Information Product Number Description Package Type Quantity/Reel FS8820 TSSOP8 package version TSSOP-8 3,000 4. Pin Assignment 5. Limiting Values Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID @TA = 25℃ Continuous Drain Current3 6.5 A ID @TA = 100℃ Continuous Drain Current3 4 A IDM Pulsed Drain Current1 20 A PD @TA = 25℃ Total Power Dissipation 1.25 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Is Diode Forward Current 1.7 A 6. Thermal Data Symbol Parameter Value Unit Rthj-a Thermal Resistance Junction-ambient3 Max. 125 ℃/W FORTUNE' Properties For Reference Only
  1. Electrical Characteristics Electrical Characteristics @Tj = 25℃ ( unless otherwise specified ) Symbol Parameter Test Conditions Min. Typ. Max. Units Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 20 - - V Δ BVDSS/Δ Tj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.1 - V/℃ RDS(ON) 1 Static Drain-Source On-Resistance2 VGS = 4.5V, ID = 6A - 19 24 mΩ VGS = 2.5V, ID = 5A - 25 32 mΩ VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 0.5 0.7 1.0 V IDSS Drain-Source Leakage Current (Tj = 25℃) VDS =16 VGS = 0V - - 1 uA Drain-Source Leakage Current (Tj = 85℃) VDS =16 VGS = 0V - - 30 uA IGSS Gate-Source Leakage VGS = ±10V - - ±10 uA Diode Characteristics VSD 1 Diode Forward Voltage ISD=1.7A,VGS=0V 0.7 1.0 V trr Reverse Recovery Time ISD=6A,dISD/dt=100A/μ s 27 Ns Qrr Reverse Recovery Charge 15 nC Dynamic Characteristics 2 RG Gate Resistance VGS=VDS=0V,F=1MHz 4 Ω Ciss Input Capacitance VGS=0V,VDS=10V Frequency=1MHz 1110 pF Coss Output Capacitance 240 Crss Reverse Transfer Capacitance 200 td(on) Turn-on Delay Time VDS=10V,VGEN=4.5V, RG=6Ω ,RL=10Ω, IDS=1A 6 12 ns tr Turn-on Rise Time 13 24 td(off) Turn-off Delay Time 67 122 tf Turn-off Rise Time 37 68 Gate Charge Characteristics2 Qg Total Gate Charge VGS=4.5V,VDS=10V, IDS=6A 15 21 nC Qgs Gate-Source Charge 1.5 Qgd Gate-Drain Charge 4.7 Notes： 1. Pulse width ≦ 300us, duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing FORTUNE' Properties For Reference Only
  1. Typical Characteristics On-Region characteristics @ Ta=20Deg -5.000 0.000 5.000 10.000 15.000 20.000 25.000 Vds, Drain to Source Voltage ( V ) Id, Drain Current ( A ) 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V On-Region characteristics @ Ta=100Deg -5.000 0.000 5.000 10.000 15.000 20.000 Vds, Drain to Source Voltage ( V ) Id, Drain Current ( A ) 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized On-Resistance Fig 4. Gate Threshold Variation with Temperature On-Resistance V.S. Gate Voltage @ Id=4A Vgs, Gate to Source Voltage ( V ) On Resistance ( mOhm )

20 Deg

100 Deg

Fig 5. Forward Characteristic of Reverse Diode FORTUNE' Properties For Reference Only

  1. Package Information 10. Revision History Version Date Page Description 1.0 2010/01/04 - Version 1.0 released 1.1 2011/07/01 4 RDS45, VGS=4.5V, IDS=6A, Typ.=19mR, Max.=24mR RDS25, VGS=2.5V, IDS=5A, Typ.=25mR, Max.=32mR 1.2 2014/05/22 2 Revised company address FORTUNE' Properties For Reference Only