FS4422 FORTUNE | Alldatasheet

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REV. 1.4 FS4422-DS-14_EN MAY 2014 Datasheet FS4422 Single N-Channel Enhancement Mode Power MOSFET FORTUNE' Properties For Reference Only

Rev. 1.4 2/6 Fortune Semiconductor Corporation 富晶電子股份有限公司 Danshui Dist, New Taipei City 251, Taiwan Tel.：886-2-28094742 Fax：886-2-28094874 www.ic-fortune.com This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to modify the product specification without further notice. No liability is assumed by Fortune Semiconductor Corporation as a result of the use of this product. No rights under any patent accompany the sale of the product FORTUNE' Properties For Reference Only

Rev. 1.4 3/6 1. Features

1.1 Low on-resistance

1.1.1 RDS(ON) = 20 mΩ MAX. (V GS = 10V, ID = 11A) 1.1.2 RDS(ON) = 26 mΩ MAX. (V GS = 4.5V, ID = 10A) 2. Applications „ Power management „ Load switch „ Battery protection 3. Ordering Information Product Number Description Package Type Quantity/Reel FS4422 SOP-8 package version SOP-8 3,000 4. Pin Assignment 5. Limiting Values Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID @TA = 25℃ Continuous Drain Current3 11 A ID @TA = 70℃ Continuous Drain Current3 9.3 A IDM Pulsed Drain Current1 50 A PD @TA = 25℃ Total Power Dissipation 3 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Is Diode Forward Current 4.3 A FORTUNE' Properties For Reference Only

Rev. 1.4 4/6 6. Thermal Data Symbol Parameter Value Unit Rthj-a Thermal Resistance Junction-ambient Max. 75 ℃/W 7. Electrical Characteristics Electrical Characteristics @Tj = 25℃ ( unless otherwise specified ) Symbol Parameter Test Conditions Min. Typ. Max. Units Static Characteristics BVDSS Drain-Source Breakdown Voltage V GS = 0V, ID = 250uA 30 - - V RDS(ON) 1 Static Drain-Source On-Resistance 2 V GS = 10V, ID = 11A - 12.6 20 mΩ V GS = 4.5V, ID = 10A - 19.6 26 mΩ VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 1.3 1.8 2.5 V IDSS Drain-Source Leakage Current (Tj = 25℃) VDS =30V VGS = 0V - - 1 uA Drain-Source Leakage Current (Tj = 85℃) VDS =30V VGS = 0V - - 5 uA IGSS Gate-Source Leakage VGS = ±20V VDS =0V - - 100 nA Diode Characteristics VSD 1 Diode Forward Voltage ISD=1A,VGS=0V 0.75 1.0 V trr Reverse Recovery Time ISD=11A,dISD/dt=100A/ μs 17.5 21 ns Qrr Reverse Recovery Charge 9.3 12 nC Dynamic Characteristics 2 RG Gate Resistance VGS=VDS=0V,F=1MHz 0.5 0.7 0.85 Ω Ciss Input Capacitance VGS=0V,VDS=15V Frequency=1MHz 800 104 125 0 pF Coss Output Capacitance 140 180 220 Crss Reverse Transfer Capacitance 80 110 140 td(on) Turn-on Delay Time VGS=10V,VDS=15V, RG=3Ω,RL=1.35Ω, IDS=1A 4.5 6.5 ns tr Turn-on Rise Time 3,9 5.5 td(off) Turn-off Delay Time 17.4 25 tf Turn-off Rise Time 3.2 5 Gate Charge Characteristics2 Qg(10V) Total Gate Charge VGS=10V,VDS=15V, IDS=11A 15 19.8 24 nC Qg(4.5V) Total Gate Charge 7 9.8 12 Qgs Gate-Source Charge 2.5 Qgd Gate-Drain Charge 3.5 Notes： 1. Pulse width ≦ 300us, duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing FORTUNE' Properties For Reference Only

Rev. 1.4 5/6 8. Typical Characteristics BVDSS 0 200 400 600 800 1000 1200 Drain Source Current ( uA ) Voltage ( V 25 deg 125 deg VSD 0.5 1.5 2.5 3.5 Voltage ( V ) Source Drain Curre n 25 deg 125 deg Fig 1. Drain-Source Breakdown Voltage Fig 2. Doide Forward Voltage RDS_I DS=11A 02468 1 0 1 2 Gate Source Voltage ( V ) Resistance ( mo 25 deg 125 deg RDS_IDS=8A 02468 1 0 1 2 G ate Source Voltage ( V ) Resistance ( m o 25 deg 125 deg Fig 3.Static Drain-Source On-Resistance Fi g 4. Static Drain-Source On-Resistance FORTUNE' Properties For Reference Only

Rev. 1.4 6/6 9. Package Information 10. Revision History Version Date Page Description 1.0 2010/12/22 - Version 1.0 released 1.1 2011/02/18 4 Revise IGSS Unit nA 1.2 2011/05/26 3 Revise Applications 1.3 2011/11/03 4 Revise RDS(ON):10V, 11A MAX:20mΩ, 4.5V, 10A MAX:26m Ω 1.4 2014/05/22 2 Revised company address FORTUNE' Properties For Reference Only