DW01HA FORTUNE | Alldatasheet
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REV. 1.3 DW01HA-DS-13_EN JAN 2014 Datasheet DW01HA One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET FORTUNE' Properties For Reference Only
Fortune Semiconductor Corporation 富晶電子股份有限公司 23F,No.29-5, Sec. 2, Zhongzheng E. Rd., Danshui Dist, New Taipei City 251, Taiwan Tel.：886-2-28094742 Fax：886-2-28094874 www.ic-fortune.com This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to modify the product specification without fu rther notice. No liab ility is assumed by Fortune Semiconductor Corporation as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.3 2/14 FORTUNE' Properties For Reference Only
- General Description The DW01HA battery protection IC is designed to protect lithium-ion/polymer battery from damage or degrading the lifetime due to overcharge, overdischarge, and/or overcurrent for one-cell lithium-ion/polymer battery powered systems, such as cellular phones. The ultra-small package and less required external components make it ideal to integrate the DW01HA into the limited space of battery pack. The accurate ±25mV overcharging detection voltage ensures safe and full utilization charging. The very low standby current drains little current from the cell while in storage. 2. Features z With built-in N-MOSFET of low turn-on resistance. z Reduction in Board Size due to Miniature Package SOT-23-6, DFN-5. z Protection IC： Ultra-Low Quiescent Current at 2.5μA (Vcc=3.9V). Ultra-Low Overdischarge Current at 1.8μA (Vcc=2.0V). Overcharge Protection Voltage 4.28V ± 25mV Overdischarge Protection Voltage 2.4V ± 100mV Overcurrent Protection Voltage 150mV ± 15mV Auto Recovery function z MOSFET： Rss(ON) ＜ 55m Ω GS = 3.7V , ID = 1A) 3. Ordering Information DW01HA-x Serial code from S、D* (S：SOT-23-6 Green-Package) (D：DFN-5 Green-Package) TEMPERATURE RANGE -40°C~+85°C 4. Applications z Protection IC for One-Cell Lithium-Ion / Lithium-Polymer Battery Pack Rev. 1.3 3/14 FORTUNE' Properties For Reference Only
- Product Name List Model Package Overcharge detection voltage [VOCP] (V) Overcharge release voltage [VOCR] (V) Overdischarge detection voltage [VODP] (V) Overdischarge release voltage [VODR] (V) Overcurrent detection voltage [VOI1] (V) change function Standby function release Built-in N-MOSFET source to source Ron [RSS(ON)] (mΩ) recovery < 55 recovery < 55 6. Pin Configuration and Package Marking Information Pin No. Symbol Description
1 GND Ground pin
2 D12 Two MOSFET common drain connection pin
3 BATT- Connect to negative of charger or load
4 CS Input pin for current sense, charger detect
5 D12 Two MOSFET common drain connection pin
6 VCC Power supply, through a resistor (R1)
Top Point and Under_line：Lot No. Bottom Point：Year W : week, A~Z & A ~ Z Rev. 1.3 4/14 FORTUNE' Properties For Reference Only
Pin No. Symbol Description
1 NC NC
2 GND Ground pin
4 VCC Power supply, through a resistor (R1)
5 CS Input pin for current sense, charger detect
6 D12 Tow MOSFET common drain connection pin
C：Year. B：Week Code, A~Z & A ~ Z 001 :Serial number Rev. 1.3 5/14 FORTUNE' Properties For Reference Only
- Functional Block Diagram Charge Over Current Detector 8. Typical Application Circuit Symbol Purpose Recommended Remakes R1 ESD protection. For power fluctuation. 100~470Ω Resistance should be as small as possible to avoid lowering of the overcharge detection accuracy caused by VDD pin current. Use 470Ω for better ESD protection. C1 For power fluctuation. 0.1μF R2 Protection for reverse connection of a charger. 1k~2kΩ Select a resistance as large as possible to prevent large current when a charge is connected in reverse. Rev. 1.3 6/14 FORTUNE' Properties For Reference Only
- Absolute Maximum Ratings (GND=0V, Ta=25°C unless otherwise specified) Item Symbol Rating Unit Input voltage between VCC and GND * VCC GND-0.3 to GND+15 V CS input pin voltage VCS VCC -30 to VCC +0.3 V Operating Temperature Range TOP -40 to +85 °C Storage Temperature Range TST -40 to +125 °C Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current3 ID @TA=25℃ 6.8 A Continuous Drain Current3 ID @TA=100℃ 4.3 A Pulsed Drain Current1 IDM 25 A Total Power Dissipation PD @TA=25℃ 1.4 W Storage Temperature Range TSTG -55 to 150 ℃ Operating Junction Temperature Rang TJ -55 to 150 ℃ Note: DW01HA contains a circuit that will protect it from static discharge; but please take special care that no excessive static electricity or voltage which exceeds the limit of the protection circuit will be applied to it. Rev. 1.3 7/14 FORTUNE' Properties For Reference Only
Rev. 1.3 8/14 10. Electrical Characteristics (Ta=25°C unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL Min Typ Max UNIT Supply Current VCC=3.9V ICC 2.5 5.2 μA Overdischarge Current VCC=2.0V IOD 1.8 4.5 μA Overcharge Protection Voltage DW01HA VOCP 4.255 4.280 4.305 V Overcharge Release Voltage VOCR 4.030 4.080 4.130 V Overdischarge Protection Voltage VODP 2.300 2.400 2.500 V Overdischarge Release Voltage VODR 2.400 2.500 2.600 V Overcurrent Protection Voltage VOIP （VOI1） 0.135 0.150 0.165 V Short Current Protection Voltage VCC=3.6V VSIP （VOI2） 0.60 0.70 0.80 V Charger over current detection voltage VCC=3.6V VCOIP -0.120 -0.100 -0.080 V Faulty charger detect voltage Vdet 6.0 8.0 10.0 V Faulty charger recovery voltage Vrec 5.8 7.3 8.8 V 0V charging prohibit VST 0.65 0.95 1.25 V Overcharge Delay Time TOC 130 200 280 ms Overdischarge Delay Time VCC=3.6V to 2.0V TOD 65 100 140 ms Overcurrent Delay Time (1) VCC=3.6V TOI1 13.3 20.0 26.5 ms Overcurrent Delay Time (2) VCC=3.6V TOI2 0.60 1.0 1.80 ms Charge over current delay time VCC=3.6V Tdet 5.10 8.50 12.75 ms N-MOSFET have low turn-on resistance Drain-Source Breakdown Voltage (BATT- to D12 / D12 to GND) VGS=0V,ID=250uA BV DSS 20 V Breakdown Voltage Temperature Coefficient Reference to 25℃, I D=1mA ΔBVDSS/Δ Tj 0.1 V/℃ Static Source-Source On-Resistance (BATT- to GND) V GS=3.7V,ID=1A RSS(ON) 50 55 mΩ Static Source-Source On-Resistance (BATT- to GND) V GS=2.7V,ID=1A 60 70 mΩ Drain-Source Leakage Current) (BATT- to D12 / D12 to GND) V DS=16V,VGS=0V IDSS (Tj=25℃) 1 uA Drain-Source Leakage Current (BATT- to D12 / D12 to GND) V DS=16V,VGS=0V IDSS (Tj=85℃) 30 uA FORTUNE' Properties For Reference Only
- Description of Operation Normal Condition If VODP<VCC<VOCP and VCH<VCS<VOI1, M1 and M2 are both turned on. The charging and discharging processes can be operated normally. Overcharge Protection When the voltage of the battery cell exceeds the overcharge protection voltage (VOCP) beyond the overcharge delay time (TOC) period, charging is inhibited by turning off of the charge control MOSFET. The overcharge condition is released in two cases: The voltage of the battery cell becomes lower than the overcharge release voltage (VOCR) through self-discharge. The voltage of the battery cell falls below the overcharge protection voltage (VOCP) and a load is connected. When the battery voltage is above VOCP, the overcharge condition will not release even a load is connected to the pack. Overdischarge Protection When the voltage of the battery cell goes below the overdischarge protection voltage (VODP) beyond the overdischarge delay time (TOD) period, discharging is inhibited by turning off the discharge control MOSFET. The default of overdischarge delay time is 100ms. Inhibition of discharging is immediately released when the voltage of the battery cell becomes higher than overdischarge release voltage (VODR) through charging. Overcurrent Protection In normal mode, the DW01HA continuously monitors the discharge current by sensing the voltage of CS pin. If the voltage of CS pin exceeds the overcurrent protection voltage (VOIP) beyond the overcurrent delay time (TOI1) period, the overcurrent protection circuit operates and discharging is inhibited by turning off the discharge control MOSFET. The overcurrent condition returns to the normal mode when the load is released or the impedance between BATT+ and BATT- is larger than 500k Ω. The DW01HA provides two overcurrent detection levels (0.15V and 0.7V) with two overcurrent delay time (TOI1 and TOI2) corresponding to each overcurrent detection level. Charge Detection after Overdischarge When overdischarge occurs, the discharge control MOSFET turns off and discharging is inhibited. However, charging is still permitted through the parasitic diode of MOSFET. Once the charger is connected to the battery pack, the DW01HA immediately turns on all the timing generation and detection circuitry. Charging progress is sensed if the voltage between CS and GND is below charge detection threshold voltage (VCH). Auto Power Down recovery The IC continues to operate even after the overdischarge state has been entered. The battery voltage rising to the overdischarge release voltage(VODR) or higher is the only required condition for the IC to return to the normal state. Rev. 1.3 9/14 FORTUNE' Properties For Reference Only
Rev. 1.3 10/14 12. Design Guide Protection the CS pin Suppressing the Ripple and Disturbance from Charger R2 is used for latch-up protection when charger is connected under overdischarge condition and overstress protection at reverse connecting of a charger. To suppress the ripple and disturbance from charger, connecting R1 and C1 to VCC is recommended. FORTUNE' Properties For Reference Only
- Timing Diagram Overcharge Condition ÆLoad Discharging Æ Normal Condition VOCP VOCR VODR VODP Charger Load Battery VoltageBATT- Pin VCC GND TOC TOC VOI1 VCH Overdischarge Condition Æ Charging by a Charger ÆNormal Condition VOCP VOCR VODR VODP Charger Load Battery VoltageBATT- Pin VCC GND TOD TOD VCH VOI2 Rev. 1.3 11/14 FORTUNE' Properties For Reference Only
Rev. 1.3 12/14 Over Current Condition Æ Normal Condition VOCP VOCR VODR VODP Charger Load GND Battery VoltageBATT- Pin VCC VOI1 VOI2 TOI1 TOI2 FORTUNE' Properties For Reference Only
- Package Outline Dimension (SOT-23-6) Rev. 1.3 13/14 FORTUNE' Properties For Reference Only
Rev. 1.3 14/14 Dimension (DFN-5) 15. Revision History Version Date Page Description 1.0 2011/07/08 All New release 1.1 2011/09/07 8, 13 Revise RSS(ON) 3.7V TYP : 50mΩ MAX : 55mΩ RSS(ON) 2.7V TYP : 60mΩ MAX : 70mΩ Revise Package Outline SOT-23-6 1.2 2012/09/12 14 Revise Package Outline (DFN-5) 1.3 2014/01/09 4 Revise VOI1 Specified Unit FORTUNE' Properties For Reference Only