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- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
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Technical content
Features
- High Surge Capability DO-4 Package
- Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol FR16B(R)02 F R16D(R)02 FR16G(R)02 Unit Repetitive peak reverse voltage V RRM 100 200 400 V RMS reverse voltage VRMS 70 140 280 V FR16J(R)02 600 420 FR16B02 thru FR16JR02 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Conditions Silicon Fast Recovery Diode
- Types from 100 V to 600 V VRRM 2. Reverse polarity (R): Stud is anode. DC blocking voltage VDC 100 200 400 V Continuous forward current IF 16 16 16 A Operating temperature Tj -55 to 150 -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 -55 to 150 °C Parameter Symbol FR16B(R)02 F R16D(R)02 FR16G(R)02 Unit Diode forward voltage 0.9 0.9 0.9 25 25 25 μA 666 m A Recovery Time Maximum reverse recovery time TRR 200 200 200 nS Thermal characteristics Thermal resistance, junction - case RthJC 1.5 1.5 1.5 °C/W 0.9 600 225 IF=0.5 A, IR=1.0 A, IRR= 0.25 A VR = 100 V, Tj = 150 °C V 250 1.5 A225 -55 to 150 -55 to 150 FR16J(R)02 VR = 100 V, Tj = 25 °C IF = 16 A, Tj = 25 °C TC ≤ 100 °C Conditions 225 225TC = 25 °C, tp = 8.3 ms Electrical characteristics, at Tj = 25 °C, unless otherwise specified Surge non-repetitive forward current, Half Sine Wave IF,SM Reverse current IR VF www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/ 1
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Package dimensions and terminal configuration Product is marked with part number and terminal configuration. FR16B02 thru FR16JR02 DO- 4 (DO-203AA) J G F A E D P N B C M Inches Millimeters Min Max Min Max A 10-32 UNF B 0.424 0.437 10.77 11.10 E 0.453 0.492 11.50 12.50 F 0.114 0.140 2.90 3.50 N 0.031 0.045 0.80 1.15 P 0.070 0.79 1.80 2.00 www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/ 3