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Technical content
Features
- High Surge Capability DO-4 Package
- Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol FR12K(R)05 Unit Repetitive peak reverse voltage V RRM 800 V RMS reverse voltage VRMS 560 V Silicon Fast Recovery Diode
- Types from 800 V to 1000 V VRRM 2. Reverse polarity (R): Stud is anode. FR12K05 thru FR12MR05 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Conditions FR12M(R)05 1000 700 DC blocking voltage VDC 800 V Continuous forward current IF 12 A Operating temperature Tj -55 to 150 °C Storage temperature Tstg -55 to 150 °C Parameter Symbol FR12K(R)05 Unit Diode forward voltage 0.8 25 μA 6m A Recovery Time Maximum reverse recovery time TRR 500 nS Thermal characteristics Thermal resistance, junction - case RthJC 2.0 °C/W FR12M(R)05 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Surge non-repetitive forward current, Half Sine Wave IF,SM A180 -55 to 150 Reverse current IR VF VR = 100 V, Tj = 25 °C IF = 12 A, Tj = 25 °C TC ≤ 100 °C Conditions 180TC = 25 °C, tp = 8.3 ms 1000 2.0 IF=0.5 A, IR=1.0 A, IRR= 0.25 A VR = 100 V, Tj = 150 °C V0.8 500 www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/ 1
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Package dimensions and terminal configuration Product is marked with part number and terminal configuration. FR12K05 thru FR12MR05 DO- 4 (DO-203AA) J G F A E D P N B C M Inches Millimeters Min Max Min Max A 10-32 UNF B 0.424 0.437 10.77 11.10 E 0.453 0.492 11.50 12.50 F 0.114 0.140 2.90 3.50 N 0.031 0.045 0.80 1.15 P 0.070 0.79 1.80 2.00 www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/ 3