FMMT4124 JIANGSU | Alldatasheet

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Technical content

  1. 9 0. 95 0. 95 2. 9 0. 4 1. 3 2. 4 1. 0 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT4124 TRANSISTOR（ NPN ）

FEATURES

PCM： 0.33W（Tamb=25℃） Collector current ICM：0.2A Collector-base voltage V (BR) CBO： 30V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=10μ A， IE=0 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1mA， IB=0 V Emitter-base breakdown voltage V(BR)EBO IE= 10μ A， IC=0 V Collector cut-off current ICBO VCB= 20 V , IE=0 0.05 μ A Emitter cut-off current IEBO VEB= 3V , IC=0 0.05 μ A DC current gain HFE VCE= 1V, IC= 2mA 120 360 Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=50 mA, IB= 5mA 0.95 V Transition frequency fT VCE=20V, IC= 10mA f =100MHz 300 MHz Marking FMMT4124： 2C Unit : mm SOT—23 1. BASE 2. EMITTER 3. COLLECTOR