F1402 POLYFET | Alldatasheet
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RF CHARACTERISTICS ( WATTS OUTPUT ) General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PATENTED GOLD METALIZED 40Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, ABSOLUTE MAXIMUM RATINGS (TC = 25 C) o Total Device Junction to Case Thermal Maximum Junction Storage Temperature DC Drain Current Drain to Gate Drain to Source Gate to Source
80 Watts
2.1 C o 200 -65 to 150 4 A 30V V V 150 150 ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Gps η VSWR Common Source Power Gain Drain Efficiency Load Mismatch Tolerance dB Relative 0.2 20:1 Idq = Idq = Idq = 0.2 0.2 50.0 Vds = 50.0 Vds = 50.0 Vds = F = 400 MHz F = 400 MHz F = 400 MHz Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 125 1.6 0.7 9.6 4.4 Mho Ohm Amp pF V V pF pF mA uA 0.1 Ids = Vgs = 0V 50.0 Vds = Vgs = 0V Vds = 0 V, Vgs = 30V 0.2 Ids = Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 4 Vgs = 20V, Vds = 10V 50.0 Vds = V, Vgs = 0V, F = 1 MHz A 50.0 Vds = V, Vgs = 0V, F = 1 MHz 50.0 Vds = V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com REVISION SILICON GATE ENHANCEMENT MODE RF POWER HIGH GAIN, LOW NOISE "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F enhance broadband performance t TM C o C o C/W o F1402 polyfet rf devices Dissipation Resistance Temperature Voltage Voltage Voltage 2/9/98 VDMOS TRANSISTOR
F1402 POUT VS PIN F=400MHZ, VDS=50V, Idq=.4A PIN IN WATTS 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 POUT GAIN Efficiency = 43% Pout Gain POUT VS PIN GRAPH F1402 F1E 2 DIE CAPACITANCE 100 1000 VDS IN VOLTS Coss Ciss Crss F1E 2 DIE IV VDS IN VOLTS ID IN AMPS vg=2v Vg=4v Vg=6v vg=8v vg=12v F1E 2 DIE ID & GM Vs VG 0.01 0.10 1.00 10.00 Vgs in Volts Id in amps; Gm in mhos Id gM POLYFET RF DEVICES 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com CAPACITANCE VS VOLTAGE IV CURVE ID AND GM VS VGS S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES REVISION 2/9/98 Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches