APT13003E BCDSEMI | Alldatasheet

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HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E Data Sheet May 2008 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Parameter Symbol Value Unit Collector-Emitter V oltage (VBE=0) V CES 700 V Collector-Emitter V oltage (IB=0) V CEO 465 V Emitter-Base V oltage (IC=0) V EBO 9V Collector Current I C 1.5 A Collector Peak Current (Pulse) (Note 2) I CM 3A Base Current I B 0.75 A Base Peak Current (Pulse) (Note 2) I BM 1.5 A Power Dissipation, TA=25oC For TO-92 P TOT 1.1 W Power Dissipation, TC=25oC For TO-126 P TOT 20 W Operating Junction Temperature T J 150 oC Storage Temperature Range T STG -65 to 150 oC Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause perm anent damage to the device. These are stress ratings only, and functio nal operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: Pulse test for Pulse Width < 5ms, Duty Cycle ≤ 10%. Absolute Maximum Ratings (Note 1) BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.

Ordering Information

Package Part Number Marking ID Packing Type TO-92 APT13003EZ-E1 13003EZ-E1 Bulk APT13003EZTR-E1 13003EZ-E1 Ammo TO-126 APT13003EU-E1 EU13003E Bulk Circuit Type E: APT13003E E1: Lead Free APT13003 - TR: Ammo Blank: Bulk Package Z: TO-92 U: TO-126

HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E Data Sheet May 2008 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Parameter Symbol Value Unit Thermal Resistance (Junction-to-Case) For TO-92 RθJC 83.3 oC/W For TO-126 6.25 Thermal Resistance (Junction-to-Ambient) For TO-92 RθJA 113.6 oC/WFor TO-126 96 Thermal Characteristics Parameter Symbol Conditions Min Typ Max Unit Collector Cut-off Current (VBE=-1.5V) ICEV VCE=700V 10 μA Collector-Emitter Sustaining Vo l t a g e ( IB=0) VCEO (sus) I C=100μA 465 V Collector-Emitter Saturation V oltage (Note 3) VCE (sat) IC=0.5A, IB=0.1A 0.17 0.3 V Base-Emitter Saturation V oltage (Note 3) V BE (sat) IC=0.5A, IB=0.1A 1.0 V IC=1.0A, IB=0.25A 1.2 DC Current Gain (Note 3) hFE IC=0.3A, VCE=2V 15 IC=0.5A, VCE= 2 V 1 31 73 0 IC=1.0A, VCE=2V 5 25 Output Capacitance C ob VCB=10V , f=0.1MHZ 16 pF Current Gain Bandwidth Product f T VCE=10V , IC=0.1A 4 MHz Turn-on Time with Resistive Load ton IC=1A, VCC=125V , IB1=0.2A, IB2=-0.2A, TP=25μS 0.3 1 μsStorage Time with Resistive Load ts 1.8 3 Fall Time with Resistive Load tf 0.28 0.4 ( TC=25oC, unless otherwise specified.)

Electrical Characteristics

Note 3: Pulse test for Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E Data Sheet May 2008 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Mechanical Dimensions TO-92 (Bulk Packing) Unit: mm(inch) 2.440(0.096) 2.640(0.104) 0.380(0.015) 0.550(0.022) Φ1.600(0.063) MAX 14.100(0.555) 14.500(0.571) 1.270(0.050) TYP 3.300(0.130) 3.700(0.146) 4.300(0.169) 4.700(0.185) 1.100(0.043) 1.400(0.055) 4.400(0.173) 4.700(0.185) 3.430(0.135) MIN 0.360(0.014) 0.510(0.020) 0.000(0.000) 0.380(0.015)

HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E Data Sheet May 2008 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) TO-92 (Ammo Packing) Unit: mm(inch) 4.300(0.169) 4.700(0.185) 13.000(0.512) 14.000(0.551) 2.540(0.100) Typ 4.500(0.177) 5.500(0.217) 1.270(0.050) Typ 0.380(0.015) 0.550(0.022) 4.400(0.173) 4.700(0.185) 3.430(0.135) MIN 0.360(0.014) 0.510(0.020) 0.000(0.000) 0.380(0.015) MAX 1.600(0.063) 1.100(0.043) 1.400(0.055) 3.300(0.130) 3.700(0.146) Φ

HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E Data Sheet May 2008 Rev. 1. 2 BCD Semiconductor Manufacturing Limited TO-126 Unit: mm(inch) Mechanical Dimensions (Continued) 1.100(0.043) 1.500(0.059) 2.500(0.098 2.900(0.114) 0.450(0.018) 0.600(0.024) 7.400(0.291) 7.800(0.307) 3.900(0.154) 4.100(0.161) 10.600(0.417) 11.000(0.433) 0.660(0.026) 0.860(0.034) 15.300(0.602) 15.700(0.618) 2.100(0.083) 2.300(0.091) 1.170(0.046) 1.370(0.054) 2.290(0.090)TYP 4.480(0.176) 4.680(0.184) 3.000(0.118) 3.200(0.126) 0.300(0.012) 0.000(0.000)

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com BCD Semiconductor Manufacturing Limited IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

800 Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen, 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corp. 30920 Huntwood Ave. Hayward, CA 94544, USA Tel : +1-510-324-2988 Fax: +1-510-324-2788 - Headquarters BCD Semiconductor Manufacturing Limited No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Tel: +86-21-24162266, Fax: +86-21-24162277