AT1140 BCDSEMI | Alldatasheet
Document overview
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Technical content
Features
- Clamping V oltage: 11.5V at 20A 100ns, TLP
- 1 0 . 5 V a t 6 A 8 μs/20μs
- IEC 61000-4-2: +24kV , -18kV (Air)
- IEC 61000-4-2: +20kV , -16kV (Contact)
- IEC 61000-4-5 (Lightning, 8 μs/20μs): ±6A
- Input Capacitance From I/O to VSS: 0.5pF
- TLP Dynamic Resistance: 0.25 Ω
- Monolithic Silicon Technology
Applications
- DVI
- Ethernet Port: 10/100/1000 Mb/s
- HDMI 1.3, High Definition Multi Media
- IEEE 1394 to 3.2Gb/s
- MDDI
- PCI Express
- SATA /eSATA
- USB 2.0 to 480 MHz Pin Configuration (DFN-2.5×1.0-10)
Figure 1. Pin Configuration of AT1140 (Top View)
General Purpose ITVS, 4 I/Os, CI/O-VSS< 0 . 6 5 p F A T 1 1 4 0 Aug. 2012 Rev. 1.2 BCD Semiconductor Manufacturing Limited Circuit Diagram Figure 2. Circuit Diagram of AT1140
Ordering Information
Range Part Number Marking ID Packing Type DFN-2.5×1.0-10 -55 to 85°C AT1140DN-5.0TRG1 BGB Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and green. G1: Green TR: Tape & Reel 5.0: Fixed Output 5.0V
General Purpose ITVS, 4 I/Os, CI/O-VSS< 0 . 6 5 p F A T 1 1 4 0 Aug. 2012 Rev. 1.2 BCD Semiconductor Manufacturing Limited Absolute Maximum Ratings (Note 1) Parameter Symbol Min Typ Max Unit Peak Pulse Current (tp 8μs/20μs) 8 A Peak Pulse Power (tp 8μs/20μs) 75 W Operating Voltage (DC) -0.5 6 V IEC61000-4-2 ESD (Air) -18 24 kV IEC61000-4-2 ESD (Contact) -16 20 kV IEC61000-4-5 (Lightning) 6 A 75 W Lead Temperature (Soldering, 10sec) T LEAD 260 ºC Operating Temperature -55 85 ºC Storage Temperature -55 150 ºC Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under “Recommended Operating Co nditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability.
Electrical Characteristics
TA=25ºC, unless otherwise specified. Parameter Symbol Conditions Min Typ Max Unit Working V oltage, I/O to VSS -0.7 5.5 V Channel Leakage Current I R Operating V oltage 0.5 μA Reverse Breakdown V oltage V BR At 1mA 5.5 V Holding V oltage V H 5.5 V Clamping V oltage (Surge) (IEC61000-4-5) At 6A 10.5 V Trigger V oltage V TRIG 9.5 V ESD Clamping V oltage At 20A, TLP, 100ns 11.5 V Dynamic Reverse Resistance R DIFF-R 0.25 0.3 Ω Dynamic Forward Resistance R DIFF-F 0.25 Ω Channel Input Capacitance (I/O to VSS) C I/O VI/O=2.5V , VSS=0V , f=1MHz 0.5 0.65 pF
TA=25°C, unless otherwise specified. Figure 3. BV, Trigger Voltage, Holding Voltage Figure 4. Current from I/O to VSS Figure 5. Clamping Voltage Figure 6. Waveform of I/O to VSS (Positive)
2 V / d i v
TA=25°C, unless otherwise specified. Figure 7. Input Capacitance vs. Input Voltage
General Purpose ITVS, 4 I/Os, CI/O-VSS< 0 . 6 5 p F A T 1 1 4 0 Aug. 2012 Rev. 1.2 BCD Semiconductor Manufacturing Limited Mechanical Dimensions DFN-2.5×1.0-10 Unit: mm(inch) M I N mm(inch) MAX
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com BCD Semiconductor Manufacturing Limited IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
800 Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corp. 30920 Huntwood Ave. Hayward, CA 94544, USA Tel : +1-510-324-2988 Fax: +1-510-324-2788 - Headquarters BCD Semiconductor Manufacturing Limited No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Tel: +86-21-24162266, Fax: +86-21-24162277