AP3502E BCDSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Input V oltage Range: 4.5V to 18V
  • Fixed 340kHz Frequency
  • High Efficiency at Light Load
  • High Efficiency: up to 95%
  • Output Current: 2A
  • Current Mode Control
  • Built-in Over Current Protection
  • Built-in Thermal Shutdown Function
  • Built-in UVLO Function
  • Built-in Over V oltage Protection
  • Programmable Soft Start
  • Hiccup Mode SCP

Applications

  • LCD TV
  • Set Top Box
  • Portable DVD
  • Digital Photo Frame

Figure 1. Package Type of AP3502E

Figure 2. Pin Configuration of AP3502E (Top View)

4 GND Ground pin

6 COMP

P r e l i m i n a r y D a t a s h e e t 340kHz, 2A Synchronous DC-DC Buck Converter AP3502E May. 2012 Rev. 1. 3 BCD Semiconductor Manufacturing Limited TR: Tape & Reel Blank: Tube Functional Block Diagram Figure 3. Functional Block Diagram of AP3502E

Ordering Information

Range Part Number Marking ID Packing Type SOIC-8 -40 to 85°C AP3502EM-G1 3502EM-G1 Tube AP3502EMTR-G1 3502EM-G1 Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and green. G1: Green Package M: SOIC-8

P r e l i m i n a r y D a t a s h e e t 340kHz, 2A Synchronous DC-DC Buck Converter AP3502E May. 2012 Rev. 1. 3 BCD Semiconductor Manufacturing Limited Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit IN Pin Voltage V IN -0.3 to 20 V EN Pin Voltage V EN -0.3 to V IN V SW Pin Voltage V SW 21 V BS Pin Voltage V BS -0.3 to V SW+6 V FB Pin Voltage V FB -0.3 to 6 V COMP Pin Voltage V COMP -0.3 to 6 V SS Pin Voltage V SS -0.3 to 6 V Thermal Resistance θJA 105 ºC/W Operating Junction Temperature T J 150 ºC Storage Temperature T STG -65 to 150 ºC Lead Temperature (Soldering, 10sec) T LEAD 260 ºC ESD (Human Body Model) V HBM 2000 V ESD (Machine Model) V MM 200 V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under “Recommended Operating Co nditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Input V oltage V IN 4.5 18 V Operating Ambient Temperature T A -40 85 ºC

P r e l i m i n a r y D a t a s h e e t 340kHz, 2A Synchronous DC-DC Buck Converter AP3502E May. 2012 Rev. 1. 3 BCD Semiconductor Manufacturing Limited

Electrical Characteristics

TA=25ºC, VIN=VEN=12V, VOUT=3.3V, unless otherwise specified. Parameter Symbol Conditions Min Typ Max Unit SUPPLY VOLTAGE (IN PIN) Input V oltage V IN 4.5 18 V Quiescent Current I Q V FB=1V , VEN=3V 1.2 1.4 mA Shutdown Supply Current I SHDN V EN=0V 0.1 10 µA UNDER VOLTAGE LOCKOUT Input UVLO Threshold V UVLO VIN Rising 3.65 4.00 4.25 V Input UVLO Hysteresis V HYS 200 mV ENABLE (EN PIN) EN Shutdown Threshold V oltage 1.1 1.5 2 V EN1Shutdown1Threshold1Vo l t a g e1Hystere- sis (Note 3) 350 mV EN Lockout Threshold V oltage 2.2 2.5 2.7 V EN Lockout Hysteresis 210 mV VOLTAGE REFERENCE (FB PIN) Feedback V oltage V FB 0.907 0.925 0.943 V Feedback Over V oltage Threshold V FBOV 1.1 V Feedback Bias Current I FB V FB=1V -0.1 0.1 µA MOSFET High-side Switch On-resistance (Note 2) R DSONH ISW=0.2A/0.7A 100 m Ω Low-side Switch On-resistance (Note 2) R DSONL ISW=-0.2A/-0.7A 100 m Ω CURRENT LIMIT High-side Switch Leakage Current I LEAKH VIN=18V ,VEN=VSW=0V 0.1 10 µA High-side Switch Current Limit I LIMH 2.7 3.5 A Low-side Switch Current Limit I LIML Drain to Source 0 mA SWITCHING REGULATOR Oscillator Frequency f OSC1 280 340 400 kHz Short Circuit Oscillator Frequency f OSC2 90 kHz Max. Duty Cycle D MAX V FB=0.85V 90 % Min. Duty Cycle D MIN V FB=1V 0 % ERROR AMPLIFIER Error Amplifier V oltage Gain (Note 3) A EA 400 V/V Error Amplifier Transconductance G EA 800 µA/V COMP to Current Sense Transconductance G CS 3.5 A/V THERMAL SHUTDOWN Thermal Shutdown (Note 3) T OTSD 160 ºC Thermal Shutdown Hysteresis (Note 3) T HYS 30 ºC SOFT START (SS PIN) Soft-start Time (Note 3) t SS C4=0.1µF,IOUT=500mA 15 ms Soft-start Current 5 µA Note 2: RDSON= SW2SW1 SW2SW1 I-I V-V Note 3: Not tested, guaranteed by design.

Figure 16. Typical Application of AP3502E

P r e l i m i n a r y D a t a s h e e t 340kHz, 2A Synchronous DC-DC Buck Converter AP3502E May. 2012 Rev. 1. 3 BCD Semiconductor Manufacturing Limited Mechanical Dimensions S O I C - 8 U n i t : m m ( i n c h ) R0.150(0.006) R0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 20:1 D 1.270(0.050) TYP 0.190(0.007) 0.250(0.010) D 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) Note: Eject hole, oriented hole and mold mark is optional.

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com BCD Semiconductor Manufacturing Limited IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

800 Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corp. 30920 Huntwood Ave. Hayward, CA 94544, USA Tel : +1-510-324-2988 Fax: +1-510-324-2788 - Headquarters BCD Semiconductor Manufacturing Limited No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Tel: +86-21-24162266, Fax: +86-21-24162277