DIA58108 DIOO | Alldatasheet

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Brief,Jul2025 www.dioo.com ©2025DiooMicrocircuitsCo.,Ltd.JiangsuI AutomotiveMulti-ChannelMOSFETDriver  Features  AEC-Q100 Grade 1 qualified  6 V to 28 V (40 V abs. max) operating range  Configurable source/sink current from 1 mA to 100 mA with 32 steps  Adaptive MOSFET gate control − Improved electromagnetic emission − Reduced switching losses in PWM mode  Two current sense amplifiers − Configurable gain settings − Supports high side, low side or inline  Four PWM inputs − High side and low side PWM − Active free-wheeling − Up to 100 kHz PWM frequency  Supports two different power supplies for half-bridges  Control of reverse battery protection MOSFET  Complete protections and diagnostics − VDS monitor for every MOS − Complete off-state diagnostic: open load, short to battery, short to GND − Overtemperature warning and shutdown − Timeout watchdog with configurable period settings (10, 50, 100, 200 ms) − Supply undervoltage monitor − Supply overvoltage monitor both in active and passive mode − Cross current protection  Configurable low-side 1-4 brake with short circuit detection both in sleep and normal mode  Applications  Automotive brushed DC motors  Zone control unit  Power seat modules  Power lift gate  Power sunroof  PackageInformation  Description The DIA58108 is a multi-channel NMOS gate driver which can drive up to 16 MOSFETs. The devices can be used as 8ch half-bridges for driving DC motor control applications, and they can also be used as high-side or low-side drivers for wider automotive applications. EMC performance can be well tuned by adjustable slew rate with independence from cross-current protection time and turn on/off delays. The on-board measurement and self-adaption of external MOSFET switching times allow balancing of power dissipation and EMC performance. The DIA58108 integrates complete diagnostics and protections, where brake protection greatly enhances system reliability. This function allows the motor to enter permanent brake mode to avoid unintended movement of the motor. It can also protect against supply overvoltage caused by the motor working in generator mode to protect the system. The 24-bit SPI interface allows more flexible device configuration and fault observability. For A version, DIA58108 can separately configure the drain-source overvoltage threshold for the high-side and low-side MOSFETs of a half bridge, and it can also support the independent control mode which is friendly for high-side switch application.  SimplifiedSchematic PartNumber Package Body Size DIA58108 QFN-48 7 mm × 7 mm

Brief,Jul2025 www.dioo.com ©2025DiooMicrocircuitsCo.,Ltd.Jiangsu II  OrderingInformation OrderingPartNo. TopMarking MSL RoHS TA Package DIA58108AQN48 DIAHAV8A 3 Green -40 to 125°C QFN7*7-48 Tape & Reel, 3000 DIA58108QN48 DIAEHA0H 3 Green -40 to 125°C QFN7*7-48 Tape & Reel, 3000 If you encounter any issue in the process of using the device, please contact our customer service at marketing@dioo.com or phone us at (+86)-21-62116882. If you have any improvement suggestions regarding the datasheet, we encourage you to contact our technical writing team at docs@dioo.com. Your feedback is invaluable for us to provide a better user experience.

  1. PinAssignmentandFunctions

**Figure 1. QFN7*7-48 (Top view)**

1 GH1 O

2 SH1 O

3 PWM3 I PWM input 3

4 CP O Charge pump output

5 VS I

6 CPC1N I Negative connection to charge pump capacitor 1

7 CPC1P O Positive connection to charge pump capacitor 1

8 CPC2P O Positive connection to charge pump capacitor 2

9 CPC2N I Negative connection to charge pump capacitor 2

10 DH I

Brief,Jul2025 www.dioo.com ©2025DiooMicrocircuitsCo.,Ltd.Jiangsu

11 GH8 O Gate high-side 8

12 SH8 O Source high-side 8

13 GH7 O Gate high-side 7

14 SH7 O Source high-side 7

15 SL O

Common connection to the source of the low-side MOSFETs

16 GL8 O Gate low-side 8

17 GL7 O Gate low-side 7

18 GL6 O Gate low-side 6

19 GL5 O Gate low-side 5

20 EN/PWM4 I

Can be configured as enable pin or PWM input 4 pin by register. Default as enable pin with internal pull-down.

21 SDO O Serial data output

22 CSN I Chip select not with internal pull-up

23 GH6 O Gate high-side 6

24 SH6 O Source high-side 6

25 GH5 O Gate high-side 5

26 SH5 O Source high-side 5

27 CSIP2 I Non-inverting input of the current sense amplifier 2

28 CSIN2 I Inverting input of the current sense amplifier 2

29 SCLK I Serial clock input with internal pull-down

30 CSO2 O Current sense amplifier output 2

31 VDD I Logic supply

32 GND - Ground

33 CSO1 O Current sense amplifier output1

34 SDI I Serial data input with internal pull-down

35 GH4 O Gate high-side 4

36 SH4 O Source high-side 4

37 GH3 O Gate high-side 3

38 SH3 O Source high-side 3

39 CSIP1 I Non-inverting input of the current sense amplifier 1

40 CSIN1 I

Inverting input of the current sense amplifier 1 This pin can be used as reference for the high-side MOSFET drain if CSA1 is configured as high-side

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41 PWM2 I PWM input 2

42 GL4 O Gate low-side 4

43 GL3 O Gate low-side 3

44 GL2 O Gate low-side 2

45 GL1 O Gate low-side 1

46 PWM1 I PWM input 1

47 GH2 O Gate high-side 2

48 SH2 O Source high-side 2

Not internally connect to GND. Recommend to connect to a large ground plane for the improved thermal performance.

Brief,Jul2025 www.dioo.com ©2025DiooMicrocircuitsCo.,Ltd.Jiangsu 2. PhysicalDimensions:QFN7*7-48 Common Dimensions (Unitsofmeasure=Millimeter) Symbol Min Nom Max A 0.80 0.85 0.90 A1 0.00 0.02 0.05 A3 0.203 REF b 0.18 0.23 0.28 D 6.90 7.00 7.10 E 6.90 7.00 7.10 D2 5.10 5.20 5.30 E2 5.10 5.20 5.30 e 0.50 BSC K 0.20 - - L 0.45 0.50 0.55 H 0.35 REF R 0.09 - - SCW 0.01 - 0.11 SCD 0.08 - 0.18

Brief,Jul2025 www.dioo.com ©2025DiooMicrocircuitsCo.,Ltd.Jiangsu Disclaimer This specification and information contained herein are provided on an “AS IS” basis and WITH ALL FAULTS. All product specifications, statements, information, and data (collectively, the “Information”) in this datasheet or made available on the website of www.dioo.com are subject to change without notice. The customer is responsible for checking and verifying the extent to which the Information contained in this publication is applicable to his/her application. All Information given herein is believed to be accurate and reliable, but it is presented without guarantee, warranty, or responsibility of any kind, express or implied.