DIA57070 | DigiCamel IC Datasheet

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DIA57070 DIOO | Alldatasheet

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Version1.2,Oct2024 www.dioo.com ©2024DIOOMICROCIRCUITSCO.,LTD.I AutomotiveFullyIntegratedH-bridgeMotorDriver  Features  AEC-Q100 qualified − Device ambient temperature: -40°C ≤ TA ≤ 125°C − Device junction temperature: -40°C ≤ TJ ≤ 150°C  Operating voltage: 4 to 28 V, 40 V abs. max  Output current: 12 A  RDS(on) : 85 mΩ typ per half bridge  3 V CMOS-compatible inputs  PWM operation up to 20 kHz  Very low standby current, 1.5 μA max at 25°C  Protections: − Cross-conduction protection − Overvoltage clamp − Undervoltage shutdown − Current limitation − Power limitation − Thermal shutdown − Output short to ground and short to VCC − Loss of ground and loss of VCC  CS diagnostic functions: − Analog motor current feedback − OFF-state open load detection − Output short to ground detection − Output short to VCC detection − Thermal shutdown indication  Flexibility of use as full bridge, dual half bridge and multi-motor driving configuration  PackageInformation  Applications  Automotive brushed DC motors and solenoids  Zone control unit (ZCU)  Hidden door handles  Side mirror modules  Electric spoiler adjustment  Door lock, child lock, tail gate lock  On board charger  Description The device is a fully integrated H-bridge motor driver intended for a wide range of automotive applications. The design of monolithic die in a power package offers better robustness and higher reliability. The direction and brake operation of the motor are simply controlled by applying digital signals to the INA and INB. The CS pin allows to monitor the motor current by delivering a current proportional to the motor current value, and it also develops a voltage flag for a failure on the relevant output in the ON state as well as the OFF state. The independent PWM pin, up to 20 kHz, allows to control the speed of the motor easily in all possible conditions. In all cases, a low level state on the PWM pin turns off both the LSA and LSB switches.  SimplifiedSchematic PartNumber Package BodySize DIA57070 EP-SOP16 9.9 mm × 3.9 mm

3 Green -40 to 125°C EP-SOP16 Tape & Reel, 2500

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PinAssignmentandFunctions

Figure 1. EP-SOP16 (Top view) Table 1. Pin description 1, 16 GNDA GND Source of low-side switch A. 2, 15 OUTA O Source of high-side switch A / drain of low-side switch A. 4, 5, 12 VCC Power Power supply voltage. 6 INB I Counter clockwise input. 7, 10 OUTB O Source of high-side switch B / drain of low-side switch B. 8, 9 GNDB GND Source of low-side switch B.

11 PWM I

13 CS O Multiplexed analog sense output pin. Delivers a current proportional to the motor current.

14 SEL0 I

compatible with 3 V and 5 V CMOS outputs pin. improved thermal performance.

Version1.2,Oct2024 www.dioo.com ©2024DIOOMICROCIRCUITSCO.,LTD. 2. AbsoluteMaximumRatings Exceeding the maximum ratings listed under Absolute Maximum Ratings when designing is likely to damage the device permanently. Do not design to the maximum limits because long-time exposure to them might impact the device’s reliability. The ratings are obtained over an operating free-air temperature range unless otherwise specified. Symbol Parameter Ratings Unit VCC Supply voltage 40 V -VCC Reverse DC supply voltage 0.3 V Imax Maximum output current (continuous) Internally limited A IR Reverse output current -15 A VCCPK Maximum transient supply voltage 40 V VCCJS Maximum jump-start voltage for single pulse short-circuit protection 28 V IIN Input current (INA and INB pins) -1 to 10 mA ISEL0 SEL0 pin DC input current -1 to 10 mA IPWM PWM input current -1 to 10 mA ISENSE DC output current on the current sense pin (VGND = VCC and VSENSE < 0 V) 10 mA ISENSE DC output current in reverse on the current sense pin (VCC < 0 V) -18 mA TJ Junction operating temperature -40 to 150 °C TSTG Storage temperature -55 to 150 °C 3. RecommendOperatingConditions Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. The ratings are obtained over an operating free-air temperature range unless otherwise specified. Symbol Parameter Ratings Unit VCC Supply voltage 4 to 28 V

Version1.2,Oct2024 www.dioo.com ©2024DIOOMICROCIRCUITSCO.,LTD. 4. ESDRatings When a statically-charged person or object touches an electrostatic discharge sensitive device, the electrostatic charge might be drained through sensitive circuitry in the device. If the electrostatic discharge possesses sufficient energy, damage might occur to the device due to localized overheating. Symbol Model Condition Value Unit HBM Human-body model ANSI/ESDA/JEDEC JS-001 INA, INB, PWM ±4000 V SEL0 ±4000 CS ±4000 VCC ±4000 Output ±4000 CDM Charged device model JEDEC/JS-002 ±2000 5. ElectricalCharacteristics 5.1. Generalcharacteristics The values are obtained under these conditions unless otherwise specified: VCC = 7 V up to 28 V; -40°C < TJ < 150°C. Symbol Parameter TestConditions Min Typ Max Unit Powersection VCC Operating supply voltage 4 28 V IS Supply current Off-state (standby); INA = INB = 0; SEL0 = 0; PWM = 0; VCC = 13 V; TJ = 25°C; 1.5 μA Off-state (standby); INA = INB = 0; SEL0 = 0; PWM = 0; VCC = 13 V; TJ = 85°C 2 μA Off-state (standby) INA = INB = 0; SEL0 = 0; PWM = 0; VCC = 13 V; TJ = 125°C 3 μA Off-state (no standby) INA = INB = 0; SEL0 = 5 V; PWM = 0 2 4 mA On-state: INA or INB = 5 V; PWM = 0 or PWM = 5; SEL0 = X 3.5 6 mA tD_STBY(1) Standby mode blanking time VCC = 13 V; INA = INB = PMW = 0 V; VSEL0 from 5 V to 0 V 1 2.5 5.5 ms RONHS(1) Static high-side resistance IOUT = 2.5 A; TJ = 25°C 48 mΩ IOUT = 2.5 A; TJ = -40 to 150°C 100 mΩ

Version1.2,Oct2024 www.dioo.com ©2024DIOOMICROCIRCUITSCO.,LTD. RONLS(1) Static low-side resistance IOUT = 2.5 A; TJ = 25°C 37 mΩ IOUT = 2.5 A; TJ = -40°C to 150°C 80 mΩ Vf(1) Free-wheeling diode forward voltage IOUT = -2.5 A; TJ = 150°C 0.7 0.9 V IL(off) Off-state output current of one leg INA = INB = 0; PWM = 0; VCC = 13 V; TJ = 25 °C 0 0.5 μA INA = INB = 0; PWM = 0; VCC = 13 V; TJ = 125 °C 0 3 μA IL(off_h) Off-state output current of one leg with other HSD on INA = 0; INB = 5 V; PWM = 0; VCC = 13 V 20 60 μA VIL Input low level voltage 0.9 V VIH Input high level voltage 2.1 V VIHYST Input hysteresis voltage 0.2 V VICL Input clamp voltage IIN = 0.5 mA 6 8 V IIN = -1 mA -0.7 V IINL Input low level current VIN = 0.9 V 1 μA IINH Input high level current VIN = 2.1 V 10 μA SEL0 (VCC =7Vupto18V;-40°C<TJ < 150°C) VSELL Input low level voltage 0.9 V ISELL Low level input current VSEL = 0.9 V 1 μA VSELH Input high level voltage 2.1 V ISELH High level input current VSEL = 2.1 V 10 μA VSEL(hyst) Input hysteresis voltage 0.2 V VSELCL Input clamp voltage ISEL = 0.5 mA 6 8 V ISEL = -1 mA -0.7 V PWM(VCC = 7Vup to28V;-40°C<TJ <150°C) VPWM Input low level voltage 0.9 V IPWM Low level input current VPWM = 0.9 V 1 μA VPWM Input high level voltage 2.1 V IPWMH High level input current VPWM = 2.1 V 10 μA VPWM(hyst) Input hysteresis voltage 0.2 V VPMWCL Input clamp voltage IPWM = 0.5 mA 6 8 V IPWM = -1 mA -0.7 V Note: (1) Guaranteed by design. (2) Specifications subject to change without notice.

Version1.2,Oct2024 www.dioo.com ©2024DIOOMICROCIRCUITSCO.,LTD. 5.2. Switching The values are obtained under these conditions unless otherwise specified: VCC = 13 V, RLOAD = 5.2 Ω. Symbol Parameter TestConditions Min Typ Max Unit f(1) PWM frequency 0 20 kHz td(on)(2,3) Turn-on delay time Input rise time < 1 μs 20 μs td(off)(2,3) Turn-off delay time Input rise time < 1 μs 13 μs tr(2,5) Rise time 0.7 1.5 μs tf(2,5) Fall time 0.2 0.5 μs tcross(1,4) Low-side turn-on delay time Input rise time < 1 μs 40 150 350 μs Note: (1) Parameter guaranteed by design and characterization; not subjected to production test. (2) Guaranteed by design. (3) See Figure 6. (4) See Figure 7. (5) See Figure 5. (6) Specifications subject to change without notice. 5.3. Protectionsanddiagnostics The values are obtained under these conditions unless otherwise specified: 7 V < VCC < 18 V, -40°C < TJ < 150°C. Symbol Parameter TestConditions Min Typ Max Unit VUSD Undervoltage shutdown 4 V VUSDreset Undervoltage shutdown reset 4 V VUSDHyst Undervolatge shutdown Hysteresis 0.2 V ILIM_H(2) High-side current limitation 12 18 24 A ISD_LS(2) Shutdown low-side current 13 19 25 A tSD_LS(2) Time to shutdown for the low-side VINA = VINB = 0 V; PWM = 5 V (See Figure 8) 5 μs VCL_HSD(2) High-side clamp voltage (VCC to OUTA = 0 or OUTB = 0) IOUT = 100 mA; tCLAMP = 1 ms 40 46 V VCL_LSD(2) Low-side clamp voltage (OUTA = VCC or OUTB = VCC to GND) IOUT = 100 mA; tCLAMP = 1 ms 40 46 V TTSD_HS(2) High-side thermal shutdown temperature INx = 2.1 V 160 175 190 °C TTR_HS(2) High-side thermal reset temperature 135 °C

Version1.2,Oct2024 www.dioo.com ©2024DIOOMICROCIRCUITSCO.,LTD. dK0/K0(1,2) Analog sense current drift IOUT = 0.05 A; VSENSE = 0.5 V; TJ = -40°C to 150°C -25 25 % dK1/K1(1,2) Analog sense current drift IOUT = 0.2 A; VSENSE = 0.5 V; TJ = -40°C to 150°C -21 21 % dK2/K2(1,2) Analog sense current drift IOUT = 2.5 A; VSENSE = 4 V; TJ = -40°C to 150°C -5 5 % dK3/K3(1,2) Analog sense current drift IOUT = 4 A; VSENSE = 4 V; TJ = -40°C to 150°C -4 4 % VSENSE_SAT Max analog sense output voltage VCC = 7 V; RSENSE = 10 kΩ; VSEL0 = 5 V; IOUTA = 4 A; VINA = 5 V; PWM = 0; TJ = 150 °C 5 V ISENSE0 MultiSense leakage current IOUT = 0 A; VSENSE = 0 V; INx = 0 V; SEL0 = 0; TJ = -40°C to 150°C (standby) 0 0.5 μA IOUT = 0 A; VSENSE = 0 V; INx = 0 V; SEL0 = 5 V; TJ = -40°C to 150°C (no standby) 0 0.5 μA INx = 5 V; PWM = 5 V: TJ = -40°C to 150°C; IOUT = 0 A 0 5 μA VSENSEH MultiSense output voltage in fault condition VCC = 13 V; RSENSE = 1 kΩ – E.g: OUTA in open-load INA = 0 V; IOUTA = 0 A; VOUTA = 4 V; VSEL0 = 5 V 3.6 7 V ISENSEH MultiSense output current in fault condition

9 V < VCC < 18 V;

VSENSE = VSENSEH 8 18 28 mA Note: (1) Analog sense current drift is deviation of factor K for a given device over -40°C to 150°C and 9 V < VCC < 18 V, with respect to its value measured at TJ = 25°C, VCC = 13 V. (2) Parameter guaranteed by design and characterization; not subjected to production test. (3) Guaranteed by design. (4) Specifications subject to change without notice.

0 Current monitoring HSDB

0 On Off Off Off

0 Off Off On Off

1 Hi-Z Off On Off On

0 X (1)

(2) For INA = INB = SEL0 = PWM = 0, the device enters in standby after tD_STBY. Table 3. Truth table: ON-state fault conditions

www.dioo.com ©2024DIOOMICROCIRCUITSCO.,LTD. Table 4. Truth table: OFF-state (1) The device enters standby mode after standby mode blanking time. over-stress on the device in case of short-to-battery.

Version1.2,Oct2024 www.dioo.com ©2024DIOOMICROCIRCUITSCO.,LTD. 9. BlockDiagram Name Description Logic control Control the high-side and the low-side switches according to the truth table. Undervoltage Shut down the device for battery voltage lower than 4 V. High-side and low-side clamp voltage Protect the high-side and the low-side switches from the high voltage on the battery line. High-side and low-side drivers Drive the gate of the associated switch to allow a proper Ron for the leg of the bridge. Current limitation Limit the motor current in case of short-circuit. High-side and low-side over-temperature protection Shut down the associated driver to prevent degradation and to protect the die. Low-side current sense Detect when low side current exceeds shutdown current and latches off the associated low side. Fault detection Declare the abnormal behavior of the switch through MultiSense pin. Power limitation Limit the power dissipation of the high-side driver inside safe range in case of short to ground condition.

Version1.2,Oct2024 www.dioo.com ©2024DIOOMICROCIRCUITSCO.,LTD. 10.ApplicationInformation Importantnotice:Validation and testing are the most reliable ways to confirm system functionality. The application information is not part of the specification and is for reference purposes only. 10.1.Reversebatteryprotection Three possible solutions to protect the device from reverse battery:  A Schottky diode D connected to VCC pin  An N-channel MOSFET connected to the GND pin  A P-channel MOSFET connected to the VCC pin When the reverse battery protections is absent, the device sustains less than -15 A because of the tow body diodes of the power MOSFETs. Additionally, in reverse battery condition, the I/Os of the device is pulled down to the VCC line (approximately -1.5 V). To limit the sink current from the microcontroller I/Os, insert a series resistor. The series resistor can be calculated from Equation (1): Rmax CCIOs I VVR  (1) where VIOs is the voltage on the I/Os Vcc is the operating power supply IRmax is the maximum target reverse current through microcontroller I/Os 10.2.OFF-stateopen-loaddetection Use an external circuitry to detect an open-load in off-state. Connect the circuitry between the output and VBATT. Put one network on each leg in case of half bridge operation. Put one network on one of the output in case of full bridge. (See Table 4.) The external circuitry has an external pull-up resistor Rpull_up that connects the output to a positive supply voltage VBatt. To reduce the overall standby current during the module standby mode, switch off VBatt by using an external pull_up switch. Dimension Rpull_up to ensure that in normal operative conditions VOUT is larger than VOLmax. Select the Rpull_up according to Equation (2) and (3).  When the device is used in half bridge configuration, L(off2)min OLmaxBATTmin pull_up I V-V R  (2)  When the device is used in full bridge configuration, L(off2)min OLmaxBATTmin pull_up V-V R  (3) where IL(off2) is minimum when VOL is maximum.

Version1.2,Oct2024 www.dioo.com ©2024DIOOMICROCIRCUITSCO.,LTD. 11.PhysicalDimensions:EP-SOP16 CommonDimensions (Unitsofmeasure=Millimeter) Symbol Min Max A - 1.65 A1 0.00 0.10 A2 1.35 1.55 b 0.33 0.51 c 0.17 0.25 D 9.80 10.00 D1 4.96 5.16 e 1.27 BSC E 5.90 6.10 E1 3.80 4.00 E2 2.00 2.20 L 0.40 1.27 θ 0° 8°

Version1.2,Oct2024 www.dioo.com ©2024DIOOMICROCIRCUITSCO.,LTD. Disclaimer This specification and information contained herein are provided on an “AS IS” basis and WITH ALL FAULTS. All product specifications, statements, information, and data (collectively, the “Information”) in this datasheet or made available on the website of www.dioo.com are subject to change without notice. The customer is responsible for checking and verifying the extent to which the Information contained in this publication is applicable to his/her application. All Information given herein is believed to be accurate and reliable, but it is presented without guarantee, warranty, or responsibility of any kind, express or implied.

Product Information

DIA57070 specifications and overview.

Summary

Automotive Fully Integrated H-bridge Motor Driver Oct 2024

Description

Automotive Fully Integrated H-bridge Motor Driver Oct 2024

Source title DIA57070 Datasheet(PDF) - DIOO MICROCIRCUITS CO., LTD

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