2SD669AL JIANGSU | Alldatasheet
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Technical content
TO – 126 1. EMITTER 2. COLLECTOR 3. BASE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD669AL TRANSISTOR (NPN)
FEATURES
z Low Frequency Power Amplifier MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage 200 V V CEO Collector-Emitter Voltage 170 V V EBO Emitter-Base Voltage 6.5 V I C Collector Current 1 A P C Collector Power Dissipation 1 W R θJA Thermal Resistance from Junction to Ambient 125 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃
ORDERING INFORMATION
Part Number Package Packing Method Pack Quantity 2SD669AL TO-126 Bulk 2SD669AL-TU TO-126 Tube /g122 XXX /g48/g36/g53/g46/g44/g49/g42 Equivalent Circuit D669AL/g32/g39/g72/g89/g76/g70/g72/g3/g70o/g71/g72/g3 Solid dot = Green molding compound device, if none, the normal device /g59/g59/g59/g32/g38ode/g3 www.cj-elec.com 1 A-4,Aug,2017 D669AL 60pcs/Tube 200pcs/Bag
Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100µA,I E =0 200 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 170 V Emitter-base breakdown voltage V (BR)EBO I E = 100µA,I C =0 6.5 V Collector cut-off current I CBO V CB =195V,I E =0 1 μA Collector cut-off current I CEO V CE =165V,I B =0 2 μA Emitter cut-off current I EBO V EB =5V,I C =0 0.1 μA h FE(1) V CE =5V, I C =0.15A 100 320 DC current gain h FE(2) V CE =5V, I C =500mA 33 Collector-emitter saturation voltage V CE(sat) I C =0.5A,I B =0.05A 0.9 V Base-emitter voltage V BE V CE =5V, I C =0.15A 1.4 V Collector output capacitance C ob V CB =10V,I E =0, f=1MHz 14 pF Transition frequency f T V CE =5V,I C =150mA 140 MHz CLASSIFICATION of h FE(1) RANK C D RANGE 100-200 160-320 /g40/g47/g40/g38/g55/g53/g44/g38/g36/g47/g3/g38/g43/g36/g53/g36/g38/g55/g40/g53/g44/g54/g55/g44/g38/g54 a T =25 /g1071 unless otherwise specified www.cj-elec.com 2 A-4,Aug,2017
0.0 0.5 1.0 1.5 1 10 100 1000 200 400 600 800 1000 1200 1 10 100 1000 100 200 300 400 500 012345678 100 200 300 100 1000 V CE = 5V T a =100 o C T a =25 o C COLLECTOR CURRENT I C (mA) DC CURRENT GAIN h FE I C h FE COLLECTOR POWER DISSIPATION P c (W) AMBIENT TEMPERATURE T a ( ) P c —— T a COLLECTOR CURRENT I C (mA) BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) T a =25 T a =100 β=10 I C V BEsat T a =25 T a =100 β=10 V CEsat —— I C COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) COMMON EMITTER T a =25 2mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA I B =0.2mA COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) Static Characteristic VCE=5V Ta=25 Ta=100 o C BASE-EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT I C (mA) I C —— V BE Typical Characteristics www.cj-elec.com 3 A-4,Aug,2017
A 2.500 2.900 0.098 0.114 A1 1.100 1.500 0.043 0.059 b 0.660 0.860 0.026 0.034 b1 1.170 1.370 0.046 0.054 c 0.450 0.600 0.018 0.024 D 7.400 7.800 0.291 0.307 E 10.600 11.000 0.417 0.433 e e1 4.480 4.680 0.176 0.184 h 0.000 0.300 0.000 0.012 L 15.300 15.700 0.602 0.618 L1 2.100 2.300 0.083 0.091 P 3.900 4.100 0.154 0.161 Φ 3.000 3.200 0.118 0.126 Symbol Dimensions In Millimeters Dimensions In Inches 2.290 TYP 0.090 TYP www.cj-elec.com 4 A-4,Aug,2017