2SD667 JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SD667,2SD667A T RANSISTOR (NPN)

FEATURES

z Low Frequency Power Amplifier z Complementary Pair with 2SB647/A MAXIMUM RATINGS (T a =25℃ unless otherwise noted) TO-92L EMITTER COLLECTOR BASE Symbol Paramete r Value Unit V CBO Collector- Base Voltage 120 V V CEO Collector-Emitter Voltage 2SD667 2SD667A 100 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 1 A P C Collector Power Dissipation 900 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ R θJA Thermal Resistance Junction to Ambient 139 ℃/W JC(T www.cj-elec.com 1 /g48/g36/g53/g46/g44/g49/g42 Equivalent Circuit /g3 D667/g32/g39/g72/g89/g76/g70/g72/g3/g70/g82/g71/g72/g3 /g59/g59/g59/g32/g38/g82/g71/g72/g3

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity TO-92L Bulk TO-92L Tape 2SD667 2SD667-TA /g59/g59/g59 /g122 TO-92L Bulk TO-92L Tape 2SD667A 2SD667A-TA D667 F,Aug,2017 /g3 D667A/g32/g39/g72/g89/g76/g70/g72/g3/g70/g82/g71/g72 /g59/g59/g59/g32/g38/g82/g71/g72/g3 /g59/g59/g59 /g122 /g3 D667A 500pcs/Bag 2000pcs/Box 500pcs/Bag 2000pcs/Box Solid dot = Green molding compound device, if none, the normal device Solid dot = Green molding compound device, if none, the normal device

/g40/g47/g40/g38/g55/g53/g44/g38/g36/g47/g3/g38/g43/g36/g53/g36/g38/g55/g40/g53/g44/g54/g55/g44/g38/g54 aT =25 /g1071 unless otherwise specified www.cj-elec.com 2 F,Aug,2017 P a r a m e t e r Symbol Test conditions Min Typ Max Unit Co llector-base breakdown voltage V(B R)CBO IC=1 0μA,IE= 0 120 V 2SD6 67 80 V Co llector-emitter breakdown voltage V(B R)CEO IC=1 mA,IB=0 2SD667A 100 V Emitter-b ase breakdown voltage V( BR)EBO IE=1 0μA,IC=0 5 V Co llector cut-off current ICB O V CB= 100V,IE= 0 10 μA Emitter cut-off current IEBO V EB=4 V,IC= 0 10 μA 2SD6 67 60 320 hFE(1) V CE=5 V,IC= 150mA 2SD667A 60 320 DC cu rrent gain hFE(2) V CE=5 V,IC= 500mA 30 Co llector-emitter saturation voltage VCE (sat) I C= 500mA,IB= 50mA 1 V Base-emitter v oltage VBE V CE=5 V,IC= 150mA 1.5 V T ransition frequency fT V CE=5 V,IC= 150mA 140 MHz Co llector output capacitance Cob V CB= 10V,IE= 0,f=1MHz 12 pF CL ASSIFICATION OF h FE(1) Rank B C D 2SD6 67 60-120 100-200 160-320 Ra nge 2SD667A 60-120 100-200 160-320

0.1 1 10 100 1000 204 06 08 0 1 00 100 150 200 250 10 100 1000 100 1000 25 50 75 100 125 150 200 400 600 800 1000 1200 0.1 1 10 100 1000 200 400 600 800 1000 0.1 1 10 100 1000 100 150 200 024 68 1 0 1 2 100 200 300 200 400 600 800 1000 0.1 100 1000 f=1M Hz IE=0 / IC=0 Ta=25 o C REVERSE VO LTAGE V (V) CAPACIT ANCE C (pF) VCB / VEBCob / Cib — Cib Cob TRA NSITION FREQUENCY fT (MHz COLLECTOR CURRENT IC (m VCE=5V Ta=25 o C IC fT — VCE= 5V Ta=100 o C Ta=25 o C COLLECTOR CURRENT IC (m DC CURRENT GAIN hFE IChFE —— CO LLECTOR POWER DISSIPATION Pc (mW) AM BIENT TEMPERATURE Ta ( Pc — — T a COLLECTOR CURRENT IC (m BASE- EMITTER SATURATION VOLTAGE VBEs at (mV) Ta=25℃ Ta=100℃ β=10 ICVB Esat —— Ta=25℃ Ta=100℃ β=10 VC Esat — — I C COLLECTOR-EMITTER SATURATION VO LTAGE VCE sat (mV) COLLECTOR CURRENT IC (m C OMMON EMITTER Ta=25℃ 1.0m A 0.9m A 0.8m A 0.7m A 0.6m A 0.5m A 0.4m A 0.3m A 0.2m A IB=0.1m A COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) S tatic Characteristic VCE=5V Ta=25℃ Ta=100 o C BASE- EMITTER VOLTAGE VBE(mV COLLECTOR CURRENT IC (m VBE —— I C Typical Characteristics www.cj-elec.com 3 F,Aug,2017

S ymbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 3.750 4.050 0.148 0.159 A1 1.280 1.580 0.050 0.062 b 0.380 0.550 0.015 0.022 b1 0.620 0.780 0.024 0.031 c 0.350 0.450 0.014 0.018 D 4.750 5.050 0.187 0.199 D1 4.000 0.157 E 7.850 8.150 0.309 0.321 e 1.270 TYP. 0.050 TYP. e1 2.440 2.640 0.096 0.104 L 13.800 14.200 0.543 0.559 Φ 1.600 0.063 0.000 0.300 0.000 0.012h www.cj-elec.com 4 F,Aug,2017

www.cj-elec.com 5 F,Aug,2017