D667 JINGDAO | Alldatasheet
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深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司 D667 www.jdsemi.cn R ShenZhen Jingdao Electronic Co.,Ltd. Bipolar Junction Transistor Add ： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C Tel ：0755-29799516 Fax ：0755-29799515 第 1 页 2013 版 ◆Si NPN ◆RoHS COMPLIANT 11 11．． ．．APPLICATION Charger、Emergency lamp and Electric toy control circuit 22 22．． ．．FEATURES /circle6 Features of good high temperature /circle6 High switching speed 33 33．． ．．PACKAGE TO-92 44 44．． ．．Electrical Characteristics 44 44.1 .1 .1 .1 Absolute Maximum Ratings Tamb = 25 ℃ unless specified PARAMETER SYMBOL V ALUE UNIT Collector-Base V oltage V CBO 60 V Collector-Emittor V oltage V CEO 40 V Emittor- Base V oltage V EBO 5 V Collector Current I C 2 A Ta=25 ℃ 0.8 Power Dissipation Tc=25 ℃ Ptot 12 W Junction Temperature T j 150 ℃ Storage Temperature T stg -55 ～150 ℃ 44 44.2 .2 .2 .2 Electrical Parameter Tamb = 25 ℃ unless specified V ALUE PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector-Base V oltage BV CBO I C =1mA,I E=0 60 V Collector-Emittor V oltage BV CEO I C =1mA ,IB =0 40 V Emittor-Base V oltage BV EBO I E=1mA,I C =0 5 V Collector-Base Cutoff Current ICBO V CB =60V , I E=0 10 μA Collector-Emittor Cutoff Current ICEO V CE =40V , I B =0 20 μA Emittor-Base Cutoff Current IEBO V EB =5V , I C =0 10 μA V CE =3V , IC =1mA 100 DC Current Gain hFE * V CE =3V , IC =300mA 100 400 Collector-Emittor Saturation V oltage V CE sat I C =2A, IB =0.2A 0.8 V Base-Emittor Saturation V oltage V BE sat * I C =2A, IB =0.2A 1.2 V Typical Frequency fT V CE =5V ,I C =100mA, f=10MHz 50 MHz ＊: Pulse test tp ≤300 μs, δ≤2%
1 Emitter(E) 2 Collector(C) 3 Base(B)
深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司 D667 www.jdsemi.cn R ShenZhen Jingdao Electronic Co.,Ltd. Bipolar Junction Transistor Add ： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C Tel ：0755-29799516 Fax ：0755-29799515 第 2 页 2013 版 55 55.. .. Characteristic Curve Fig1 Static Characteristic Fig2 hFE -IC IC (A) hFE 直流电流增益 IC (A) 10 10.1 0.01 10 100 VCE (V) IB =10 m A 0.5 IB =1 m A Fig3 V CEsat -IC Fig4 V BEsat -IC V CE sat (V) 0.1 IC (A) 10 10.1 0.01 0.1 IC (A) 10 10.1 0.01 V BE sat (V) V CE =3V Ta=25 ℃ IC /I B =10 Ta=25 ℃ Ta=25 ℃ Ta=25 ℃ IC /I B =10
深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司深圳市晶导电子有限公司 D667 www.jdsemi.cn R ShenZhen Jingdao Electronic Co.,Ltd. Bipolar Junction Transistor Add ： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C Tel ：0755-29799516 Fax ：0755-29799515 第 3 页 2013 版 66 66．． ．．Package Dimentions(Unit ：： ：：mm) TO TO TO TO-- --92 92 92 92