D2611 JIANGSU | Alldatasheet
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D 2611 TRANSISTOR (NPN) FEATURE power switching applications MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector -Base Voltage 600 V V CEO Collector-Emitter Voltage 400 V V EBO Emitter-Base Voltage 7 V I C Collector Current -Continuous 0.2 A P C Collector Power Dissipation 1 W T J Junction Temperature 150 ℃ T stg Storage Temperature -55 ~150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min Typ M ax Unit Collector-base breakdown voltage V (BR)CBO I C = 100μA, I E =0 600 V Collector-emitter breakdown voltage V (BR)CEO I C = 1mA , I B =0 400 V Emitter-base breakdown voltage V (BR)EBO I E = 100μ A , I C =0 7 V Collector cut-off current I CBO V CB = 600V, I E =0 100 μA Collector cut-off current I CEO V CE = 400V, I B =0 200 μA Emitter cut-off current I EBO V EB =7V, I C =0 100 μA h FE(1) V CE =20V, I C =20mA 10 40 DC current gain h FE(2) V CE =10V, I C = 0.25mA 5 I C = 50mA, I B = 10mA 0.5 V Collector-emitter saturation voltage V CE(sat) I C = 100mA, I B = 20mA 0.6 V Base-emitter saturation voltage V BE(sat) I C = 50mA, I B =10mA 1.2 V Transition frequency f T V CE =20V,I C =20mA f = 1MHz MHz Fall time t S 0.3 μs Storage time t f I C =50mA, I =-I =5mA, V CC =45V 1.5 μs CLASSIFICATION OF h FE(1) Rank Range 10-15 15-20 20-25 25-30 30-35 35-40 1 2 3 TO-126 1. EMITTER 2. COLLECTOR 3. BASE www.cj-elec.com 1 B,Oct,2014
www.cj-elec.com 2 B,Oct,2014 Min Max Min Max A 2.500 2.900 0.098 0.114 A1 1.100 1.500 0.043 0.059 b 0.660 0.860 0.026 0.034 b1 1.170 1.370 0.046 0.054 c 0.450 0.600 0.018 0.024 D 7.400 7.800 0.291 0.307 E 10.600 11.000 0.417 0.433 e e1 4.480 4.680 0.176 0.184 h 0.000 0.300 0.000 0.012 L 15.300 15.700 0.602 0.618 L1 2.100 2.300 0.083 0.091 P 3.900 4.100 0.154 0.161 Φ 3.000 3.200 0.118 0.126 Symbol Dimensions In Millimeters Dimensions In Inches 2.290 TYP 0.090 TYP