CS5N50FA9R CRMICRO | Alldatasheet

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WU XI CHI NA RE SO UR CE S HUAJ I NG MIC ROE L E CT R ONIC S C O. , LT D. P ag e 1 of 10 20 16V01 ○R Silicon N-Channel Power MOSFET General Description ： CS5N50F A9R, the silicon N -channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be use d in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features ：  Fast Switching  Low ON Resistance(Rdson≤1.5Ω)  Low Gate Charge (Typical Data: 12.6nC)  Low Reverse transfer capacitances(Typical:4pF)  100% Single Pulse avalanche energy Test Applications ： Power switch circuit of adaptor and charger. Absolute （Tc= 25℃ unless otherwise specified ）： Symbol Parameter Rating Units VDSS Drain -to-Source Voltage 500 V ID Continuous Drain Current 5 A Continuous Drain Current TC = 100 °C 3.1 A IDM Pulsed Drain Current 20 A VGS Gate-to-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 250 mJ dv/dt a3 Peak Diode Recovery dv/dt 5.0 V/ns PD Power Dissipation 30 W Derating Factor above 25 °C 0.24 W/℃ TJ，Tstg Operating Junction and Storage Temperature Range 150，–55 to 1 50 ℃ TL Maximum Temperature for Soldering 300 ℃ VDSS 500 V ID 5 A PD(TC=25℃) 30 W RDS(O N)Typ 1.3 Ω

WU XI CHI NA RE SO UR CE S HUAJ I NG MIC ROE L E CT R ONIC S C O. , LT D. P ag e 2 of 10 20 16V01 ○R CS5N50F A9R Electrical Characteristics（Tc= 25℃ unless otherwise specified ）： OFF Characteristics Symbol Parameter Test Conditions Rating Unit s Min. Typ. Max. VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250µA 500 -- -- V ΔBVDSS/ΔTJ Bvdss Temperature Coefficient ID=250uA, Reference 25℃ -- 0.6 -- V/℃ IDSS Drain to Source Leakage Current VDS =500V, VGS= 0V, VDS =400V, VGS= 0V, IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA ON Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. RDS(O N) Drain -to-Source On -Resistance VGS=10V,ID=2.5A -- 1.3 1.5 Ω VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250µ A 2.0 -- 4.0 V Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. gfs Forward Trans conductance VDS=15V, ID =2.5A -- 4 -- S Ciss Input Capacitance VGS = 0V V DS = 25V f = 1.0MHz -- 584 -- pF Coss Output Capacitance -- 61 -- Crss Reverse Transfer Capacitance -- 4 -- Resistive Switching Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. td(ON) Turn-on Delay Time ID =5A VDD = 250V RG =10Ω -- 14 -- ns tr Rise Time -- 18 -- td(OFF) Turn-Off Delay Time -- 32 -- tf Fall Time -- 11 -- Qg Total Gate Charge ID =5A VDD =400V VGS = 10V -- 12.6 -- nC Qgs Gate to Source Charge -- 3.1 -- Qgd Gate to Drain ( “Miller ”)Charge -- 4.9 --

WU XI CHI NA RE SO UR CE S HUAJ I NG MIC ROE L E CT R ONIC S C O. , LT D. P ag e 3 of 10 20 16V01 ○R CS5N50F A9R Source-Drain Diode Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. IS Continuous Source Current (Body Diode) -- -- 5 A ISM Maximum Pulsed Current (Body Diode) -- -- 20 A VSD Diode Forward Voltage IS=5.0A,V GS=0V -- -- 1.5 V trr Reverse Recovery Time IS=5.0A,Tj = 25℃ dIF/dt=100A/us , VGS=0V -- 328 -- ns Qrr Reverse Recovery Charge -- 1555 -- nC IRRM Reverse Recovery Current -- 9.5 -- A Pulse width tp≤300µs,δ≤2% Symbol Parameter Typ. Units RθJC Junction -to-Case 4.17 ℃/W RθJA Junction -to-Ambient 62.5 ℃/W a1：Repetitive rating; pulse width limited by maximum junction temperature a2：L=10mH, I D=7.1A, Start TJ=25℃ a3：ISD =5A,di/dt ≤100A/us,V DD≤BVDS, Start TJ=25℃

WU XI CHI NA RE SO UR CE S HUAJ I NG MIC ROE L E CT R ONIC S C O. , LT D. P ag e 7 of 10 20 16V01 ○R CS5N50F A9R Test Circuit and Waveform：

WU XI CHI NA RE SO UR CE S HUAJ I NG MIC ROE L E CT R ONIC S C O. , LT D. P ag e 8 of 10 20 16V01 ○R CS5N50F A9R

WU XI CHI NA RE SO UR CE S HUAJ I NG MIC ROE L E CT R ONIC S C O. , LT D. P ag e 9 of 10 20 16V01 ○R CS5N50F A9R Package Information ： *adjustable Items Values(mm) MIN MAX A 9.60 10.4 B 15.4 16.2 B1 8.90 9.50 C 4.30 4.90 C1 2.10 3.00 D 2.40 3.00 E 0.60 1.00 F 0.30 0.60 G 1.12 1.42 H 3.40 3.80 2.40 2.90 L* 12.0 14.0 N 2.34 2.74 Q 3.15 3.55 2.90 3.30

WU XI CHI NA RE SO UR CE S HUAJ I NG MIC ROE L E CT R ONIC S C O. , LT D. P ag e 10 of 10 20 16V01 ○R CS5N50F A9R The name and content of poisonous and harmful material in products Hazardous Substance Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP Limit ≤0.1% ≤0.1% 0.01% Molding Compound Note ○：Means the hazardous material is under the criterion of 2011/65/EU. ×：Means the hazardous material exceeds the criterion of 2011/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. 2. When installing the heat sink, please pay attention to the torsional moment and the smoothness of the heat sink. 3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Tel: +86 0510-85807228 Fax: +86- 0510-85800864 Marketing Part： Post：214061 T el ： +86 0510-81805277/81805336 Fax: +86 0510 -85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 T el / Fax：+86- 0510-81805243/81805110