CRSQ027N10N CRMICRO | Alldatasheet
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华润微电子(重庆)有限公司 SkyMOS1)NwMOSFET)100V,)2.6mΩ,)240A Features Product Summary
- )Uses)CRM(CQ))advanced)SkyMOS1)technology
- )Extremely)low)onwresistance)R DS(on)
- )Excellent)Q gxR DS(on)) product(FOM)
- )Qualified)according)to)JEDEC)criteria
Applications
- )Motor)control)and)drive
- )Battery)management
- )UPS)(Uninterrupible)Power)Supplies) V DS 100V 2.6mΩ 240A R DS(on) ID 100% Avalanche Tested CRSQ027N10N Package Marking and Ordering Information Packing Absolute Maximum Ratings V W Notes:1.EAS)was)tested)at)Tj)=)25 ℃,)ID)=)46A. Unit V 273 240 177 V DS Value 100 ID A mJ A Parameter Drainwsource)voltage Continuous)drain)current T C)=)25°C)(Silicon)limit) TC)=)25°C)(Package)limit) TC)=)100°C)(Silicon)limit) Pulsed)drain)current)(T C)=)25°C,)t p)limited)by)T jmax ) Symbol ID)pulse 960 529 Avalanche)energy,)single)pulse)(L=0.5mH,)Rg=25 Ω) [1] EAS Part)# CRSQ027N10N Qty 30pcs Tape)Width N/A Reel)Size N/A Marking w Package TOw247 Tube ±20
454 Ptot
Tj),) Tstg GatewSource)voltage VGS Power)dissipation)(T C)=)25°C) Operating)junction)and)storage)temperature w55...+150 100% Avalanche Tested 100% Avalanche Tested ©China Resources Microelectronics (Chongqing) Limited Page 1
华润微电子(重庆)有限公司 SkyMOS1)NwMOSFET)100V,)2.6mΩ,)240A Thermal Resistance Electrical Characteristic (at Tj = 25 °C, unless otherwise specified) Static Characteristic Gate)threshold)voltage VGS(th)) 0.28 Max Unit µA VDS =100V,V GS =0V Tj=25°C w 0.05 1 Tj=125°C RthJA °C/W 100 w w 10 RthJC min. VDS =V GS ,I D=250uA 2.2 3 3.8 V Zero)gate)voltage)drain current I DSS typ. max. w w V Parameter Thermal)resistance,)junction)–)case. Thermal)resistance,)junction)–)ambient(min.)footprint) Symbol Unit Drainwsource)breakdown voltage Value BV DSS VGS =0V,)I D=250uA Parameter Symbol Test Condition Dynamic Characteristic Body Diode Characteristic w 1.8 w Ω VGS =0V,)V DS =50V, f=1MHz pF VGS =10V,)V DS =50V, ID=90A,)f=1MHz nC VGS =10V,)V DD =50V, RG_ext =3.0Ω ns w 84 w w 11355 w 30 ww Output)Capacitance C oss w 1446 w Input)Capacitance Ciss w w 67 Reverse)Transfer Capacitance C rss w nA Tj=125°C w w 10 Gatewsource)leakage current I GSS VGS =±20V,V DS =0V w ±10 ±100 VGS =10V,)I D=90A w 2.6 3.1 Gate)resistance RG Turnwoff)delay)time td(off) Fall)time tf Rise)time tr w 54 w Gate)Total)Charge QG w 169 w w w VGS =0V,)V DS =0V, f=1MHz 112 w mΩ S Drainwsource)onwstate resistance R DS(on) w w111 GatewSource)charge Q gs Turnwon)delay)time td(on) Transconductance gfs VDS =5V,I D=90A w 197.2 w GatewDrain)charge Qgd Body Diode Characteristic ©China Resources Microelectronics (Chongqing) Limited Page 2
华润微电子(重庆)有限公司 SkyMOS1)NwMOSFET)100V,)2.6mΩ,)240A Parameter Symbol Value Body)Diode)Reverse Recovery)Charge Q rr Body)Diode)Forward Voltage V SD Body)Diode)Reverse Recovery)Time Unit t rr Test Condition min. typ. max. nC w w 338 w IF=90A,)dI/dt=100A/µ s w 101 ns VGS =0V,I SD =90A w 0.9 1.4 V ©China Resources Microelectronics (Chongqing) Limited Page 3
华润微电子(重庆)有限公司 SkyMOS1)NwMOSFET)100V,)2.6mΩ,)240A Typical Performance Characteristics 140 210 280 350 420 0 1 2 3 4 5 ID (A) VDS (V) Fig)1:)Output)Characteristics 10V 100 150 200 250 300 350 0 1 2 3 4 5 6 7 ID (A) VGS (V) Fig)2:)Transfer)Characteristics 25°C VDS =5V 125°C 3.5) 4.0) Fig)3:)Rds(on))vs)Drain)Current)and) Gate)Voltage Fig)4:)Rds(on))vs)Gate)Voltage ID=90A 5.5V 6.5V 8V 140 210 280 350 420 0 1 2 3 4 5 ID (A) VDS (V) Fig)1:)Output)Characteristics 10V 100 150 200 250 300 350 0 1 2 3 4 5 6 7 ID (A) VGS (V) Fig)2:)Transfer)Characteristics 25°C VDS =5V 125°C 0.0) 0.5) 1.0) 1.5) 2.0) 2.5) 3.0) 3.5) 4.0) 0 50 100 150 200 R DS(on) (m Ω) ID (A) Fig)3:)Rds(on))vs)Drain)Current)and) Gate)Voltage VGS =10V 0.8) 1.0) 1.2) 1.4) 1.6) 1.8) 2.0) 2.2) 2.4) 0 25 50 75 100 125 150 175 R DS(on) _Normalized Tj -Junction Temperature ( °C ) Fig)5:)Rds(on))vs.)Temperature ID=90A 4 5 6 7 8 9 10 R DS(on) (m Ω) VGS (V) Fig)4:)Rds(on))vs)Gate)Voltage ID=90A 150°C 25°C 100 1000 10000 0 10 20 30 40 50 60 70 80 C - Capacitance (PF) V (V) Fig)6:)Capacitance)Characteristics Ciss VGS =0V f=1MHz Coss Crss 5.5V 6.5V 8V VGS =10V 140 210 280 350 420 0 1 2 3 4 5 ID (A) VDS (V) Fig)1:)Output)Characteristics 10V 100 150 200 250 300 350 0 1 2 3 4 5 6 7 ID (A) VGS (V) Fig)2:)Transfer)Characteristics 25°C VDS =5V 125°C 0.0) 0.5) 1.0) 1.5) 2.0) 2.5) 3.0) 3.5) 4.0) 0 50 100 150 200 R DS(on) (m Ω) ID (A) Fig)3:)Rds(on))vs)Drain)Current)and) Gate)Voltage VGS =10V 0.8) 1.0) 1.2) 1.4) 1.6) 1.8) 2.0) 2.2) 2.4) 0 25 50 75 100 125 150 175 R DS(on) _Normalized Tj - Junction Temperature ( °C) Fig)5:)Rds(on))vs.)Temperature ID=90A 4 5 6 7 8 9 10 R DS(on) (m Ω) VGS (V) Fig)4:)Rds(on))vs)Gate)Voltage ID=90A 150°C 25°C 100 1000 10000 0 10 20 30 40 50 60 70 80 C - Capacitance (PF) VDS (V) Fig)6:)Capacitance)Characteristics Ciss VGS =0V f=1MHz Coss Crss 5.5V 6.5V 8V VGS =10V ©China Resources Microelectronics (Chongqing) Limited Page 4
华润微电子(重庆)有限公司 SkyMOS1)NwMOSFET)100V,)2.6mΩ,)240A 0 30 60 90 120 150 180 VGS (V) Qg (nC) Fig)7:)Gate)Charge)Characteristics VDS =50V ID=90A 0.01 0.1 100 IS - Diode Current(A) VSD - Diode Forward Voltage(V) Fig)8:)Bodywdiode)Forward) Characteristics 125 ˚C 25 ˚C 400 450 500 Fig)9:)Power)Dissipation 250 300 Fig)10:)Drain)Current)Derating 0 30 60 90 120 150 180 VGS (V) Qg (nC) Fig)7:)Gate)Charge)Characteristics VDS =50V ID=90A 0.01 0.1 100 IS - Diode Current(A) VSD - Diode Forward Voltage(V) Fig)8:)Bodywdiode)Forward) Characteristics 125 ˚C 25 ˚C 100 150 200 250 300 350 400 450 500 0 25 50 75 100 125 150 Ptot (W) Tc - Case Temperature ( °C ) Fig)9:)Power)Dissipation 100 150 200 250 300 0 25 50 75 100 125 150 175 ID (A) Tc - Case Temperature ( °C ) Fig)10:)Drain)Current)Derating VGS ≥10V 0.1 100 1000 0.1 1 10 100 ID (A) VDS (V) Fig)11:)Safe)Operating)Area DC Single pulse Tc=25 ˚C Limited by Rds(on) 10us 100us 1ms 10ms 1us 0 30 60 90 120 150 180 VGS (V) Qg (nC) Fig)7:)Gate)Charge)Characteristics VDS =50V ID=90A 0.01 0.1 100 IS - Diode Current(A) VSD - Diode Forward Voltage(V) Fig)8:)Bodywdiode)Forward) Characteristics 125 ˚C 25 ˚C 100 150 200 250 300 350 400 450 500 0 25 50 75 100 125 150 Ptot (W) Tc - Case Temperature ( °C ) Fig)9:)Power)Dissipation 100 150 200 250 300 0 25 50 75 100 125 150 175 ID (A) Tc - Case Temperature ( °C ) Fig)10:)Drain)Current)Derating VGS ≥10V 0.1 100 1000 0.1 1 10 100 ID (A) VDS (V) Fig)11:)Safe)Operating)Area DC Single pulse Tc=25 ˚C Limited by Rds(on) 10us 100us 1ms 10ms 1us ©China Resources Microelectronics (Chongqing) Limited Page 5
华润微电子(重庆)有限公司 SkyMOS1)NwMOSFET)100V,)2.6mΩ,)240A 0.001 0.01 0.1 ZthJC (˚C/W) tp (sec) Fig)12:)Max.)Transient)Thermal)Impedance Duty factor D=t1/t2 TJM -TC=P DM *Z thJC (t) Single pulse D=0.5 0.2 0.1 0.05 0.02 0.01 0.001 0.01 0.1 ZthJC (˚C/W) tp (sec) Fig)12:)Max.)Transient)Thermal)Impedance Duty factor D=t1/t2 TJM -TC=P DM *Z thJC (t) Single pulse D=0.5 0.2 0.1 0.05 0.02 0.01 ©China Resources Microelectronics (Chongqing) Limited Page 6
华润微电子(重庆)有限公司 SkyMOS1)NwMOSFET)100V,)2.6mΩ,)240A Test Circuit & Waveform ©China Resources Microelectronics (Chongqing) Limited Page 7
华润微电子(重庆)有限公司 SkyMOS1)NwMOSFET)100V,)2.6mΩ,)240A Package)Outline:)TOw247 1.90 2.16 0.819 0.640 0.145 0.037 0.831 0.695 0.201 0.053 2.00 2.21 2.87 3.20 0.55 0.68 2.87 3.13 0.113 0.123 0.113 0.126 0.022 0.027 0.203 0.089 0.100 0.075 0.083 A 4.85 5.15 2.27 2.54 1.90 2.10 L1 4.00 4.47 0.157 0.176 0.214)BSC. 0.618 0.635 0.513 0.557 0.102 0.800 0.087 0.776 2.60 0.95 1.35 Min. L 19.72 20.32 5.44)BSC. E1 13.03 14.15 E2 2.20 E 15.70 16.13 b c 1.07 1.33 Dimensions In Millimeters Max. Dimensions In Inches Min. Max. Symbol D e 16.25 17.65 20.80 21.10 3.68 5.10 0.042 0.052 0.075 0.085 0.079 0.087 0.191 S 5.49 6.00 0.216 0.236 Q 6.04 6.30 0.238 0.248 P 3.50 3.70 0.138 0.146 S 5.49 6.00 0.216 0.236 ©China Resources Microelectronics (Chongqing) Limited Page 8
华润微电子(重庆)有限公司 SkyMOS1)NwMOSFET)100V,)2.6mΩ,)240A
Revision History
Unless)otherwise)specified)in)the)datasheet,)the)product)is)designed)and)qulified)as)a)standard)commercial product)and)is)not)intended)for)use)in)applications)that)require)extraordinary)levels)of)quality)and)reliability, such)as)automotive,)aviation/aerospace)and)lifewsupport)devices)or)systems. Any)and)all)semicondutor)products)have)certain)probability)to)fail)or)malfunction,)which)may)result)in)personal injury,)death)or)property)damage.)Customer)are)solely)responsible)for)providing)adequate)safe)measures)when design)their)systems. CRM(CQ))reserves)the)right)to)improve)product)design,)function)and)reliability)without)notice. Date 2018w1w24 Major)changes Release)of)formal)version. 1.0 2.0 2019w6w25 Supplement)package)outline)info. Revison ©China Resources Microelectronics (Chongqing) Limited Page 9