CS50N20A0R CRMICRO | Alldatasheet

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WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2019V01 ○R Silicon N-Channel Power MOSFET General Description ： CS50N20 A0R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-263, which accords with the RoHS standard. Features ： l Fast Switching l Low ON Resistance(Rdso n≤51mΩ) l Low Gate Charge (Typical Data: 49.4nC) l Low Reverse transfer capacitances(Typical:34pF) l 100% Single Pulse avalanche energy Test Applications ： Power switch circuit of adaptor and charger. Absolute （TJ= 25℃ unless otherwise specified ）： Symbol Parameter Rating Units VDSS Drain-to-Source Voltage 200 V ID Continuous Drain Current T C = 25 °C 50 A Continuous Drain Current T C = 100 °C 38.5 A IDM Pulsed Drain Current T C = 25 °C 200 A VGS Gate-to-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 1700 mJ dv/dt a3 Peak Diode Recovery dv/dt 5.0 V/ns PD Power Dissipation T C = 25 °C 250 W Derating Factor above 25 °C 2.0 W/℃ TJ，Tstg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃ VDSS 200 V ID 50 A PD(TC=25℃) 250 W RDS(ON)Typ 42 mΩ

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 10 2019V01 ○R CS50N20 A0R Electrical Characteristics（TJ= 25℃ unless otherwise specified ）： OFF Characteristics Symbol Parameter Test Conditions Rating Unit s Min. Typ. Max. VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250 µA 200 -- -- V ΔBVDSS /ΔTJ Bvdss Temperature Coefficient ID=250uA,Reference2 5℃ -- 0.3 -- V/℃ IDSS Drain to Source Leakage Current VDS =200V, V GS= 0V, VDS =160V, V GS= 0V, IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA ON Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. RDS(ON) Drain-to-Source On-Resistance VGS=10V,ID=20A -- 42 51 mΩ VGS(TH) Gate Threshold Voltage VDS = V GS, ID = 250 µA 2.0 -- 4.0 V Pulse width tp ≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. gfs Forward Transconductance VDS=15V, ID =20A -- 65 -- S Ciss Input Capacitance VGS = 0V V DS = 25V f = 1.0MHz -- 2819 -- pF Coss Output Capacitance -- 394 -- Crss Reverse Transfer Capacitance -- 34 -- Resistive Switching Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. td(ON) Turn-on Delay Time ID =20A V DD = 100V RG =10 Ω -- 35.7 -- ns tr Rise Time -- 38.9 -- td(OFF) Turn-Off Delay Time -- 74.7 -- tf Fall Time -- 21.9 -- Qg Total Gate Charge ID =20A V DD =160V VGS = 10V -- 49.4 -- nC Qgs Gate to Source Charge -- 13 -- Qgd Gate to Drain ( “Miller ”)Charge -- 18 --

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 3 of 10 2019V01 ○R CS50N20 A0R Source-Drain Diode Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. IS Continuous Source Current (Body Diode) -- -- 50 A ISM Maximum Pulsed Current (Body Diode) -- -- 200 A VSD Diode Forward Voltage IS=40A,V GS=0V -- -- 1.5 V trr Reverse Recovery Time IS=20A,T j = 25 ℃ dIF/dt=100A/us, VGS=0V -- 261.3 ns Qrr Reverse Recovery Charge -- 2770 nC IRRM Reverse Recovery Current -- 21.2 A Pulse width tp ≤300µs,δ≤2% Symbol Parameter Max. Units RθJC Junction-to-Case 0.5 ℃/W RθJA Junction-to-Ambient 62.5 ℃/W a1：Repetitive rating; pulse width limited by maximum junction temperature a2：L=10mH, I D=18.5A, Start T J=25℃ a3：ISD =20A,di/dt ≤100A/us,V DD≤BVDS, Start T J=25℃ a4：Recommend soldering temperature defined by IPC/JEDEC J-STD 02

Figure 18. Diode Reverse Recovery Test Circuit Figure 19. Diode Reverse Recovery Waveform

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 9 of 10 2019V01 ○R CS50N20 A0R

Package Information

F E N N C D B A K H G I Q TO-263Package Items Values(mm) MIN MAX A 9.80 10.40 B 8.90 9.50 B1 0 0.10 C 4.40 4.80 D 1.16 1.37 E 0.70 0.95 F 0.30 0.60 G 1.07 1.47 H 1.30 1.80 K 0.95 1.37 L1 14.50 16.50 L2 1.60 2.30 I 0 0.2 Q 0° 8° R 0.4 N 2.39 2.69

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 10 of 10 2019V01 ○R CS50N20 A0R The name and content of poisonous and harmful material in products Part’s Name Hazardous Substance Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP Limit ≤ 0.1% 0.1% 0.01% Note ○：Means the hazardous material is under the criterion of 2011/65/EU. ×：Means the hazardous material exceeds the criterion of 2011/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. 2. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Tel: +86 0510-85807228 Fax: +86- 0510-85800864 Marketing Part： Post ：214061 Tel ： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110